Oxide field-effect transistor with polymer-based gate insulator

Research output: Contribution to journalArticlepeer-review

Abstract

Development of field-effect transistors (FETs) using functional oxide films is currently an area of active research. To effectively modulate electrical conduction properties, the formation of oxide channel/gate insulator interface is critical. In this technical note, a gate insulator fabrication technique based on a poly(para-xylylene) coating method, some examples of FETs on new oxide materials, and potential applications to flexible oxide FETs are described.

Original languageEnglish
Pages (from-to)207-210
Number of pages4
JournalIEEJ Transactions on Electronics, Information and Systems
Volume139
Issue number3
DOIs
Publication statusPublished - 2019 Jan 1

Keywords

  • Electrostatic carrier accumulation
  • Field effect
  • Field-effect transistors
  • Functional oxides
  • Gate insulator

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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