Oxide field-effect transistor with polymer-based gate insulator

Kohei Fujiwara

doi:10.1541/ieejeiss.139.207

Oxide field-effect transistor with polymer-based gate insulator

Kohei Fujiwara

Materials Property Division

Research output: Contribution to journal › Article › peer-review

Abstract

Development of field-effect transistors (FETs) using functional oxide films is currently an area of active research. To effectively modulate electrical conduction properties, the formation of oxide channel/gate insulator interface is critical. In this technical note, a gate insulator fabrication technique based on a poly(para-xylylene) coating method, some examples of FETs on new oxide materials, and potential applications to flexible oxide FETs are described.

Original language	English
Pages (from-to)	207-210
Number of pages	4
Journal	IEEJ Transactions on Electronics, Information and Systems
Volume	139
Issue number	3
DOIs	https://doi.org/10.1541/ieejeiss.139.207
Publication status	Published - 2019 Jan 1

Keywords

Electrostatic carrier accumulation
Field effect
Field-effect transistors
Functional oxides
Gate insulator

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1541/ieejeiss.139.207

Cite this

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abstract = "Development of field-effect transistors (FETs) using functional oxide films is currently an area of active research. To effectively modulate electrical conduction properties, the formation of oxide channel/gate insulator interface is critical. In this technical note, a gate insulator fabrication technique based on a poly(para-xylylene) coating method, some examples of FETs on new oxide materials, and potential applications to flexible oxide FETs are described.",

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AB - Development of field-effect transistors (FETs) using functional oxide films is currently an area of active research. To effectively modulate electrical conduction properties, the formation of oxide channel/gate insulator interface is critical. In this technical note, a gate insulator fabrication technique based on a poly(para-xylylene) coating method, some examples of FETs on new oxide materials, and potential applications to flexible oxide FETs are described.

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KW - Functional oxides

KW - Gate insulator

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Oxide field-effect transistor with polymer-based gate insulator

Abstract

Keywords

ASJC Scopus subject areas

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