Oxide and interface trap densities estimation in ultrathin W/La 2O 3/Si MOS capacitors

M. Mamatrishat, T. Kubota, T. Seki, K. Kakushima, P. Ahmet, K. Tsutsui, Y. Kataoka, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

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    5 Citations (Scopus)


    A novel interpretation for conductance spectra obtained by conductance method of La 2O 3 gated MOS capacitors has been proposed. Two distinct peaks, one with broad spectrum ranging from 10 k to 200 kHz and the other near 1 kHz with a single time constant spectrum, have been observed at depletion condition. The former spectrum can be assigned as the interface traps (D it) located at the interface between La-silicate and the Si substrate by statistical surface potential fluctuation model. On the other hand, as the latter slow trap signal shows strong influence with the thickness of La-silicate layer, it can be assigned as the trappings (D slow) at the interface between La 2O 3 and La-silicate. Finally, the D it and D slow trends on annealing temperature are summarized.

    Original languageEnglish
    Pages (from-to)1039-1042
    Number of pages4
    JournalMicroelectronics Reliability
    Issue number6
    Publication statusPublished - 2012 Jun 1

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Atomic and Molecular Physics, and Optics
    • Safety, Risk, Reliability and Quality
    • Condensed Matter Physics
    • Surfaces, Coatings and Films
    • Electrical and Electronic Engineering

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    Mamatrishat, M., Kubota, T., Seki, T., Kakushima, K., Ahmet, P., Tsutsui, K., Kataoka, Y., Nishiyama, A., Sugii, N., Natori, K., Hattori, T., & Iwai, H. (2012). Oxide and interface trap densities estimation in ultrathin W/La 2O 3/Si MOS capacitors. Microelectronics Reliability, 52(6), 1039-1042. https://doi.org/10.1016/j.microrel.2011.12.025