Oxide and interface trap densities estimation in ultrathin W/La 2O 3/Si MOS capacitors

M. Mamatrishat, T. Kubota, T. Seki, K. Kakushima, P. Ahmet, K. Tsutsui, Y. Kataoka, A. Nishiyama, N. Sugii, K. Natori, T. Hattori, H. Iwai

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


A novel interpretation for conductance spectra obtained by conductance method of La 2O 3 gated MOS capacitors has been proposed. Two distinct peaks, one with broad spectrum ranging from 10 k to 200 kHz and the other near 1 kHz with a single time constant spectrum, have been observed at depletion condition. The former spectrum can be assigned as the interface traps (D it) located at the interface between La-silicate and the Si substrate by statistical surface potential fluctuation model. On the other hand, as the latter slow trap signal shows strong influence with the thickness of La-silicate layer, it can be assigned as the trappings (D slow) at the interface between La 2O 3 and La-silicate. Finally, the D it and D slow trends on annealing temperature are summarized.

Original languageEnglish
Pages (from-to)1039-1042
Number of pages4
JournalMicroelectronics Reliability
Issue number6
Publication statusPublished - 2012 Jun
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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