TY - GEN
T1 - Oxidation process of HfO 2/SiO 2/Si structures observed by high-resolution RBS
AU - Zhao, Ming
AU - Nakajima, Kaoru
AU - Suzuki, Motofumi
AU - Kimura, Kenji
AU - Uematsu, Masashi
AU - Torii, Kazuyoshi
AU - Kamiyama, Satoshi
AU - Nara, Yasuo
AU - Watanabe, Heiji
AU - Shiraishi, Kenji
AU - Chikyow, Toyohiro
AU - Yamada, Keisaku
PY - 2007
Y1 - 2007
N2 - Oxidation process of HfO 2/SiO 2/Si(001) structures during annealing in dry oxygen is studied by high-resolution Rutherford backscattering spectroscopy. During the growth of the interfacial SIO 2 layer, surface accumulation of Si is observed. This indicates that silicon species are emitted from the SiO 2/Si interface to release the stress induced by oxidation as was predicted by recent theoretical studies. The behavior of oxygen during the growth of the interfacial SiO 2 layer is also studied using 18O as a tracer. The observed 18O profile shows that atomic oxygen ions diffuse through HfO 2 and SiO 2 layers via an exchange mechanism.
AB - Oxidation process of HfO 2/SiO 2/Si(001) structures during annealing in dry oxygen is studied by high-resolution Rutherford backscattering spectroscopy. During the growth of the interfacial SIO 2 layer, surface accumulation of Si is observed. This indicates that silicon species are emitted from the SiO 2/Si interface to release the stress induced by oxidation as was predicted by recent theoretical studies. The behavior of oxygen during the growth of the interfacial SiO 2 layer is also studied using 18O as a tracer. The observed 18O profile shows that atomic oxygen ions diffuse through HfO 2 and SiO 2 layers via an exchange mechanism.
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U2 - 10.1109/ICSICT.2006.306260
DO - 10.1109/ICSICT.2006.306260
M3 - Conference contribution
AN - SCOPUS:34547334965
SN - 1424401615
SN - 9781424401611
T3 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
SP - 392
EP - 396
BT - ICSICT-2006
T2 - ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Y2 - 23 October 2006 through 26 October 2006
ER -