Oxidation process of HfO 2/SiO 2/Si structures observed by high-resolution RBS

Ming Zhao, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Uematsu, Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara, Heiji Watanabe, Kenji Shiraishi, Toyohiro Chikyow, Keisaku Yamada

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Oxidation process of HfO 2/SiO 2/Si(001) structures during annealing in dry oxygen is studied by high-resolution Rutherford backscattering spectroscopy. During the growth of the interfacial SIO 2 layer, surface accumulation of Si is observed. This indicates that silicon species are emitted from the SiO 2/Si interface to release the stress induced by oxidation as was predicted by recent theoretical studies. The behavior of oxygen during the growth of the interfacial SiO 2 layer is also studied using 18O as a tracer. The observed 18O profile shows that atomic oxygen ions diffuse through HfO 2 and SiO 2 layers via an exchange mechanism.

Original languageEnglish
Title of host publicationICSICT-2006
Subtitle of host publication2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages392-396
Number of pages5
DOIs
Publication statusPublished - 2007
EventICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China
Duration: 2006 Oct 232006 Oct 26

Publication series

NameICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

OtherICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
CountryChina
CityShanghai
Period06/10/2306/10/26

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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