Oxidation process of HfO 2/SiO 2/Si structures observed by high-resolution RBS

Ming Zhao; Kaoru Nakajima; Motofumi Suzuki; Kenji Kimura; Masashi Uematsu; Kazuyoshi Torii; Satoshi Kamiyama; Yasuo Nara; Heiji Watanabe; Kenji Shiraishi; Toyohiro Chikyow; Keisaku Yamada

doi:10.1109/ICSICT.2006.306260

Oxidation process of HfO ₂/SiO ₂/Si structures observed by high-resolution RBS

Ming Zhao, Kaoru Nakajima, Motofumi Suzuki, Kenji Kimura, Masashi Uematsu, Kazuyoshi Torii, Satoshi Kamiyama, Yasuo Nara, Heiji Watanabe, Kenji Shiraishi, Toyohiro Chikyow, Keisaku Yamada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Oxidation process of HfO ₂/SiO ₂/Si(001) structures during annealing in dry oxygen is studied by high-resolution Rutherford backscattering spectroscopy. During the growth of the interfacial SIO ₂ layer, surface accumulation of Si is observed. This indicates that silicon species are emitted from the SiO ₂/Si interface to release the stress induced by oxidation as was predicted by recent theoretical studies. The behavior of oxygen during the growth of the interfacial SiO ₂ layer is also studied using ¹⁸O as a tracer. The observed ¹⁸O profile shows that atomic oxygen ions diffuse through HfO ₂ and SiO ₂ layers via an exchange mechanism.

Original language	English
Title of host publication	ICSICT-2006
Subtitle of host publication	2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings
Pages	392-396
Number of pages	5
DOIs	https://doi.org/10.1109/ICSICT.2006.306260
Publication status	Published - 2007
Event	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology - Shanghai, China Duration: 2006 Oct 23 → 2006 Oct 26

Publication series

Name	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Other

Other	ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology
Country	China
City	Shanghai
Period	06/10/23 → 06/10/26

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/ICSICT.2006.306260

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Zhao, M., Nakajima, K., Suzuki, M., Kimura, K., Uematsu, M., Torii, K., Kamiyama, S., Nara, Y., Watanabe, H., Shiraishi, K., Chikyow, T., & Yamada, K. (2007). Oxidation process of HfO ₂/SiO ₂/Si structures observed by high-resolution RBS. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 392-396). [4098117] (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2006.306260

Oxidation process of HfO ₂/SiO ₂/Si structures observed by high-resolution RBS. / Zhao, Ming; Nakajima, Kaoru; Suzuki, Motofumi; Kimura, Kenji; Uematsu, Masashi; Torii, Kazuyoshi; Kamiyama, Satoshi; Nara, Yasuo; Watanabe, Heiji; Shiraishi, Kenji; Chikyow, Toyohiro; Yamada, Keisaku.

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2007. p. 392-396 4098117 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhao, M, Nakajima, K, Suzuki, M, Kimura, K, Uematsu, M, Torii, K, Kamiyama, S, Nara, Y, Watanabe, H, Shiraishi, K, Chikyow, T & Yamada, K 2007, Oxidation process of HfO ₂/SiO ₂/Si structures observed by high-resolution RBS. in ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 4098117, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 392-396, ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Shanghai, China, 06/10/23. https://doi.org/10.1109/ICSICT.2006.306260

Zhao M, Nakajima K, Suzuki M, Kimura K, Uematsu M, Torii K et al. Oxidation process of HfO ₂/SiO ₂/Si structures observed by high-resolution RBS. In ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2007. p. 392-396. 4098117. (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2006.306260

Zhao, Ming ; Nakajima, Kaoru ; Suzuki, Motofumi ; Kimura, Kenji ; Uematsu, Masashi ; Torii, Kazuyoshi ; Kamiyama, Satoshi ; Nara, Yasuo ; Watanabe, Heiji ; Shiraishi, Kenji ; Chikyow, Toyohiro ; Yamada, Keisaku. / Oxidation process of HfO ₂/SiO ₂/Si structures observed by high-resolution RBS. ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2007. pp. 392-396 (ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

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title = "Oxidation process of HfO 2/SiO 2/Si structures observed by high-resolution RBS",

abstract = "Oxidation process of HfO 2/SiO 2/Si(001) structures during annealing in dry oxygen is studied by high-resolution Rutherford backscattering spectroscopy. During the growth of the interfacial SIO 2 layer, surface accumulation of Si is observed. This indicates that silicon species are emitted from the SiO 2/Si interface to release the stress induced by oxidation as was predicted by recent theoretical studies. The behavior of oxygen during the growth of the interfacial SiO 2 layer is also studied using 18O as a tracer. The observed 18O profile shows that atomic oxygen ions diffuse through HfO 2 and SiO 2 layers via an exchange mechanism.",

author = "Ming Zhao and Kaoru Nakajima and Motofumi Suzuki and Kenji Kimura and Masashi Uematsu and Kazuyoshi Torii and Satoshi Kamiyama and Yasuo Nara and Heiji Watanabe and Kenji Shiraishi and Toyohiro Chikyow and Keisaku Yamada",

note = "Copyright: Copyright 2011 Elsevier B.V., All rights reserved.; ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 23-10-2006 Through 26-10-2006",

year = "2007",

doi = "10.1109/ICSICT.2006.306260",

language = "English",

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series = "ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings",

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AU - Zhao, Ming

AU - Nakajima, Kaoru

AU - Suzuki, Motofumi

AU - Kimura, Kenji

AU - Uematsu, Masashi

AU - Torii, Kazuyoshi

AU - Kamiyama, Satoshi

AU - Nara, Yasuo

AU - Watanabe, Heiji

AU - Shiraishi, Kenji

AU - Chikyow, Toyohiro

AU - Yamada, Keisaku

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N2 - Oxidation process of HfO 2/SiO 2/Si(001) structures during annealing in dry oxygen is studied by high-resolution Rutherford backscattering spectroscopy. During the growth of the interfacial SIO 2 layer, surface accumulation of Si is observed. This indicates that silicon species are emitted from the SiO 2/Si interface to release the stress induced by oxidation as was predicted by recent theoretical studies. The behavior of oxygen during the growth of the interfacial SiO 2 layer is also studied using 18O as a tracer. The observed 18O profile shows that atomic oxygen ions diffuse through HfO 2 and SiO 2 layers via an exchange mechanism.

AB - Oxidation process of HfO 2/SiO 2/Si(001) structures during annealing in dry oxygen is studied by high-resolution Rutherford backscattering spectroscopy. During the growth of the interfacial SIO 2 layer, surface accumulation of Si is observed. This indicates that silicon species are emitted from the SiO 2/Si interface to release the stress induced by oxidation as was predicted by recent theoretical studies. The behavior of oxygen during the growth of the interfacial SiO 2 layer is also studied using 18O as a tracer. The observed 18O profile shows that atomic oxygen ions diffuse through HfO 2 and SiO 2 layers via an exchange mechanism.

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