Oxidation process dependence of strain field under the SiO 2/Si(001) interface revealed by X-ray multiple-wave diffraction

W. Yashiro, Y. Yoda, K. Takahashi, M. Yamamoto, Takeo Hattori, K. Miki

Research output: Contribution to journalArticle

Abstract

A multiple-wave X-ray diffraction phenomenon, i.e., interaction between Bragg reflection and crystal-truncation-rod (CTR) scattering, is applied to characterize strain field under SiO2/Si(001) interface. Application of this phenomenon to strain characterization allows us to reveal that there is very small strain field extending over a mesoscopic-scale depth under the SiO2/Si interface and having a static fluctuation in the lateral direction. It also allows us to obtain information on distribution of strain field. In this paper oxidation-process dependence of strain distribution is discussed: some recently obtained results of wet oxidations at 900°C and 1100°C are compared with those of dry oxidation and Kr/O2 plasma oxidation.

Original languageEnglish
Article number012009
JournalJournal of Physics: Conference Series
Volume83
Issue number1
DOIs
Publication statusPublished - 2007 Jun 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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