Oxidation of the hydrogen terminated silicon surfaces by oxygen plasma investigated by in-situ infrared spectroscopy

Masanori Shinohara, Teruaki Katagiri, Keitaro Iwatsuji, Yoshinobu Matsuda, Hiroshi Fujiyama, Yasuo Kimura, Michio Niwano

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We have investigated oxidation process of hydrogen terminated Si surfaces by oxygen plasma using infrared absorption spectroscopy (IRAS) in the multiple internal reflection (MIR) geometry. We have measured IRAS spectra in the Si-H stretching vibration regions of the hydrogen-fluoride acid (HF) treated Si surface and the hydrogen (H) plasma treated Si(100) surface during the oxygen plasma exposure in order to elucidate a plasma oxidation process. IRAS data demonstrated that the densities of hydride species rapidly decrease on the HF-treated surface by the oxygen plasma exposure; on the other hand, they slowly decrease on the H-plasma treated surface by the exposure. IRAS data also demonstrated that dihydride (SiH2) species are more rapidly removed on the HF-treated surface by the oxygen plasma exposure than monoohydride (SiH) species. More hydride species are left on the H-plasma treated surface after the exposure to oxygen plasma than on the HF-treated surface because the H-plasma treatment makes Si surfaces rougher and more hydrogen insert into the subsurface regions than the HF treatment does. Oxygen plasma is hard to oxidize the H-plasma treated surface compared with the HF-treated surface.

Original languageEnglish
Pages (from-to)128-132
Number of pages5
JournalThin Solid Films
Volume475
Issue number1-2 SPEC. ISS.
DOIs
Publication statusPublished - 2005 Mar 22

Keywords

  • Hydride species
  • Infrared absorption spectroscopy
  • Oxygen plasma
  • Si(100) surface

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Oxidation of the hydrogen terminated silicon surfaces by oxygen plasma investigated by in-situ infrared spectroscopy'. Together they form a unique fingerprint.

Cite this