Oxidation of silicon and silicon carbide in ozone-containing atmospheres at 973 K

Takayuki Narushima, Michihisa Kato, Shin Murase, Chiaki Ouchi, Yasutaka Iguchi

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

The oxidation behavior of a silicon wafer, chemically vapor-deposited SiC, and single-crystal SiC was investigated in an oxygen-2%-7% ozone gas mixture at 973 K. The thickness of the oxide film that formed during oxidation was measured by ellipsometry. The oxidation rates in the ozone-containing atmosphere were much higher than those in a pure oxygen atmosphere. The parabolic oxidation kinetics were observed for both silicon and SiC. The parabolic rate constants varied linearly with the ozone-gas partial pressure. Inward diffusion of atomic oxygen formed by the dissociation of ozone gas through the SiO2 film apparently was the rate-controlling process.

Original languageEnglish
Pages (from-to)2049-2055
Number of pages7
JournalJournal of the American Ceramic Society
Volume85
Issue number8
DOIs
Publication statusPublished - 2002 Aug

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

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