Oxidation of hydrogen-terminated Si surfaces studied by infrared spectroscopy

Michio Niwano, Jun ichi Kageyama, Koji Kinashi, Jun ichi Sawahata, Nobuo Miyamoto

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)

Abstract

We present the first systematic infrared spectroscopy study to demonstrate the evolution of hydrogen bonding states at early stages of oxidation of hydrogen-terminated Si(100) surfaces exposed to air. We observe spectral features due to intermediate oxidation species, which are generated by attack of the Si-H and back bonds of a surface Si atom by oxygen. The exposure-time dependent concentration of the intermediate oxidation species is calculated within a simple kinetic model in which oxidation is described as a successive conversion of both Si-H and Si-Si bonds around a surface Si atom into the Si-O bond. From comparison of the experimental results with the model calculation, we suggest that oxidation proceeds on the entire surface homogeneously, and also that during exposure of the surface to air Si-H bonds are generated.

Original languageEnglish
Pages (from-to)L245-L249
JournalSurface Science
Volume301
Issue number1-3
DOIs
Publication statusPublished - 1994 Jan 10

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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