Oxidation of CVD Si3N4 at 1550° to 1650°C

TOSHIO HIRAI, KOICHI NIIHARA, Takashi Goto

Research output: Contribution to journalArticlepeer-review

73 Citations (Scopus)

Abstract

A thermo gravimetric study of the oxidation behavior of chemically vapor‐deposited amorphous and crystalline Si3N4 (CVD Si3N4) was made in dry oxygen (0.1 MPa) at 1550° to 1650°C. The specimens were prepared under various deposition conditions using a mixture of SiCl4, NH3, and H2 gases. The crystalline CVD Si3N4 indicated a parabolic oxidation kinetics over the whole temperature range, whereas the amorphous CVD Si3N4 changed from a parabolic to a linear law with increased temperature. The oxidation mechanism is discussed in terms of the activation energy for the oxidation and the microstructure of the formed oxide films.

Original languageEnglish
Pages (from-to)419-424
Number of pages6
JournalJournal of the American Ceramic Society
Volume63
Issue number7-8
DOIs
Publication statusPublished - 1980 Jan 1

ASJC Scopus subject areas

  • Ceramics and Composites
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Oxidation of CVD Si<sub>3</sub>N<sub>4</sub> at 1550° to 1650°C'. Together they form a unique fingerprint.

Cite this