Oxidation of CVD Si3N4 at 1550° to 1650°C

TOSHIO HIRAI; KOICHI NIIHARA; Takashi Goto

doi:10.1111/j.1151-2916.1980.tb10204.x

Oxidation of CVD Si₃N₄ at 1550° to 1650°C

TOSHIO HIRAI, KOICHI NIIHARA, Takashi Goto

Materials Processing and Characterization Division

Research output: Contribution to journal › Article › peer-review

73 Citations (Scopus)

Abstract

A thermo gravimetric study of the oxidation behavior of chemically vapor‐deposited amorphous and crystalline Si₃N₄ (CVD Si₃N₄) was made in dry oxygen (0.1 MPa) at 1550° to 1650°C. The specimens were prepared under various deposition conditions using a mixture of SiCl₄, NH₃, and H₂ gases. The crystalline CVD Si₃N₄ indicated a parabolic oxidation kinetics over the whole temperature range, whereas the amorphous CVD Si₃N₄ changed from a parabolic to a linear law with increased temperature. The oxidation mechanism is discussed in terms of the activation energy for the oxidation and the microstructure of the formed oxide films.

Original language	English
Pages (from-to)	419-424
Number of pages	6
Journal	Journal of the American Ceramic Society
Volume	63
Issue number	7-8
DOIs	https://doi.org/10.1111/j.1151-2916.1980.tb10204.x
Publication status	Published - 1980 Jan 1

ASJC Scopus subject areas

Ceramics and Composites
Materials Chemistry

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abstract = "A thermo gravimetric study of the oxidation behavior of chemically vapor‐deposited amorphous and crystalline Si3N4 (CVD Si3N4) was made in dry oxygen (0.1 MPa) at 1550° to 1650°C. The specimens were prepared under various deposition conditions using a mixture of SiCl4, NH3, and H2 gases. The crystalline CVD Si3N4 indicated a parabolic oxidation kinetics over the whole temperature range, whereas the amorphous CVD Si3N4 changed from a parabolic to a linear law with increased temperature. The oxidation mechanism is discussed in terms of the activation energy for the oxidation and the microstructure of the formed oxide films.",

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AU - HIRAI, TOSHIO

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AB - A thermo gravimetric study of the oxidation behavior of chemically vapor‐deposited amorphous and crystalline Si3N4 (CVD Si3N4) was made in dry oxygen (0.1 MPa) at 1550° to 1650°C. The specimens were prepared under various deposition conditions using a mixture of SiCl4, NH3, and H2 gases. The crystalline CVD Si3N4 indicated a parabolic oxidation kinetics over the whole temperature range, whereas the amorphous CVD Si3N4 changed from a parabolic to a linear law with increased temperature. The oxidation mechanism is discussed in terms of the activation energy for the oxidation and the microstructure of the formed oxide films.

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