A thermo gravimetric study of the oxidation behavior of chemically vapor‐deposited amorphous and crystalline Si3N4 (CVD Si3N4) was made in dry oxygen (0.1 MPa) at 1550° to 1650°C. The specimens were prepared under various deposition conditions using a mixture of SiCl4, NH3, and H2 gases. The crystalline CVD Si3N4 indicated a parabolic oxidation kinetics over the whole temperature range, whereas the amorphous CVD Si3N4 changed from a parabolic to a linear law with increased temperature. The oxidation mechanism is discussed in terms of the activation energy for the oxidation and the microstructure of the formed oxide films.
|Number of pages||6|
|Journal||Journal of the American Ceramic Society|
|Publication status||Published - 1980 Jan 1|
ASJC Scopus subject areas
- Ceramics and Composites
- Materials Chemistry