TY - JOUR
T1 - Oxidation of CVD Si3N4 at 1550° to 1650°C
AU - HIRAI, TOSHIO
AU - NIIHARA, KOICHI
AU - Goto, Takashi
PY - 1980/1/1
Y1 - 1980/1/1
N2 - A thermo gravimetric study of the oxidation behavior of chemically vapor‐deposited amorphous and crystalline Si3N4 (CVD Si3N4) was made in dry oxygen (0.1 MPa) at 1550° to 1650°C. The specimens were prepared under various deposition conditions using a mixture of SiCl4, NH3, and H2 gases. The crystalline CVD Si3N4 indicated a parabolic oxidation kinetics over the whole temperature range, whereas the amorphous CVD Si3N4 changed from a parabolic to a linear law with increased temperature. The oxidation mechanism is discussed in terms of the activation energy for the oxidation and the microstructure of the formed oxide films.
AB - A thermo gravimetric study of the oxidation behavior of chemically vapor‐deposited amorphous and crystalline Si3N4 (CVD Si3N4) was made in dry oxygen (0.1 MPa) at 1550° to 1650°C. The specimens were prepared under various deposition conditions using a mixture of SiCl4, NH3, and H2 gases. The crystalline CVD Si3N4 indicated a parabolic oxidation kinetics over the whole temperature range, whereas the amorphous CVD Si3N4 changed from a parabolic to a linear law with increased temperature. The oxidation mechanism is discussed in terms of the activation energy for the oxidation and the microstructure of the formed oxide films.
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U2 - 10.1111/j.1151-2916.1980.tb10204.x
DO - 10.1111/j.1151-2916.1980.tb10204.x
M3 - Article
AN - SCOPUS:0019037817
VL - 63
SP - 419
EP - 424
JO - Journal of the American Ceramic Society
JF - Journal of the American Ceramic Society
SN - 0002-7820
IS - 7-8
ER -