TY - GEN
T1 - Oxidation of Bonded Thin Ti Films Using Oxide Underlayers in Atomic Diffusion Bonding Process for Optical Applications
AU - Yonezawa, G.
AU - Sato, Y.
AU - Abe, S.
AU - Uomoto, M.
AU - Shimatsu, T.
PY - 2019/5
Y1 - 2019/5
N2 - Structural analyses revealed Ti film thickness at the bonded interface as more than twice that of the original thickness, with enhanced Ti oxide formation with oxygen dissociated from oxide underlayers. This process provides an interface with 100% light transmittance.
AB - Structural analyses revealed Ti film thickness at the bonded interface as more than twice that of the original thickness, with enhanced Ti oxide formation with oxygen dissociated from oxide underlayers. This process provides an interface with 100% light transmittance.
UR - http://www.scopus.com/inward/record.url?scp=85068413032&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85068413032&partnerID=8YFLogxK
U2 - 10.23919/LTB-3D.2019.8735120
DO - 10.23919/LTB-3D.2019.8735120
M3 - Conference contribution
AN - SCOPUS:85068413032
T3 - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
BT - Proceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Y2 - 21 May 2019 through 25 May 2019
ER -