Oxidation of Bonded Thin Ti Films Using Oxide Underlayers in Atomic Diffusion Bonding Process for Optical Applications

G. Yonezawa, Y. Sato, S. Abe, M. Uomoto, T. Shimatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Structural analyses revealed Ti film thickness at the bonded interface as more than twice that of the original thickness, with enhanced Ti oxide formation with oxygen dissociated from oxide underlayers. This process provides an interface with 100% light transmittance.

Original languageEnglish
Title of host publicationProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages1
ISBN (Electronic)9784904743072
DOIs
Publication statusPublished - 2019 May
Event6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019 - Kanazawa, Ishikawa, Japan
Duration: 2019 May 212019 May 25

Publication series

NameProceedings of 2019 6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019

Conference

Conference6th International Workshop on Low Temperature Bonding for 3D Integration, LTB-3D 2019
Country/TerritoryJapan
CityKanazawa, Ishikawa
Period19/5/2119/5/25

ASJC Scopus subject areas

  • Process Chemistry and Technology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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