TY - JOUR
T1 - Oxidation-induced stress in Si nanopillars
AU - Ye, Shujun
AU - Yamabe, Kikuo
AU - Endoh, Tetsuo
N1 - Funding Information:
The authors thank Drs. H. Kariyazaki, H. Nagahama, H. Fujimori, and T. Ishikawa of Globalwafers Japan Company, and Mr. H. Inoue and Profs. E. Fukuda and M. Niwa of Center for Innovative Integrated Electronic Systems (CIES), Tohoku University, for their help during experiments. This research has been partly carried out at the Laboratory for Nanoelec-tronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, with the kind help from Mr. W. Li, and Associate Prof. M. Sakuraba of Sato-Sakuraba Laboratory. This work is supported by the Japan Science and Technology Agency ACCEL, Japan, under Grant JPMJAC1301 (‘‘Three-dimensional integrated circuits technology based on vertical BC-MOSFET and its advanced application exploration,’’ Research director: Tetsuo Endoh).
Funding Information:
The authors thank Drs. H. Kariyazaki, H. Nagahama, H. Fujimori, and T. Ishikawa of Globalwafers Japan Company, and Mr. H. Inoue and Profs. E. Fukuda and M. Niwa of Center for Innovative Integrated Electronic Systems (CIES), Tohoku University, for their help during experiments. This research has been partly carried out at the Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, with the kind help from Mr. W. Li, and Associate Prof. M. Sakuraba of Sato-Sakuraba Laboratory. This work is supported by the Japan Science and Technology Agency ACCEL, Japan, under Grant JPMJAC1301 (?Three-dimensional integrated circuits technology based on vertical BC-MOSFET and its advanced application exploration,? Research director: Tetsuo Endoh).
Publisher Copyright:
© 2019, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2019/8/30
Y1 - 2019/8/30
N2 - In this work, we investigate the microstructure and oxidation of Si nanopillars and report that the oxidation at the sidewall of Si pillars is initially retarded (the so-called self-limiting) and eventually stops altogether at a certain size (stopping size), and further oxidation causes cracks at the bottom of the pillars, that depends on the initial Si nanopillar diameter and the experimental conditions. The diffusion of oxidant in the oxide and the compressive stress due to volume expansion from Si to SiO2 caused by the old oxide are insufficient to explain the above phenomenon. Herein, the chemical reaction (breaking of Si–Si bonds) that causes the remaining Si–Si bonds to shrink is introduced; this new model well explains the oxidation of Si nanopillars with the evidence of the change in crystal planes distances observed from transmission electron microscope. The present work contributes to the intrinsic understanding and precise controlling of oxidation in Si nanopillars for future device fabrication.
AB - In this work, we investigate the microstructure and oxidation of Si nanopillars and report that the oxidation at the sidewall of Si pillars is initially retarded (the so-called self-limiting) and eventually stops altogether at a certain size (stopping size), and further oxidation causes cracks at the bottom of the pillars, that depends on the initial Si nanopillar diameter and the experimental conditions. The diffusion of oxidant in the oxide and the compressive stress due to volume expansion from Si to SiO2 caused by the old oxide are insufficient to explain the above phenomenon. Herein, the chemical reaction (breaking of Si–Si bonds) that causes the remaining Si–Si bonds to shrink is introduced; this new model well explains the oxidation of Si nanopillars with the evidence of the change in crystal planes distances observed from transmission electron microscope. The present work contributes to the intrinsic understanding and precise controlling of oxidation in Si nanopillars for future device fabrication.
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U2 - 10.1007/s10853-019-03670-x
DO - 10.1007/s10853-019-03670-x
M3 - Article
AN - SCOPUS:85065675621
VL - 54
SP - 11117
EP - 11126
JO - Journal of Materials Science
JF - Journal of Materials Science
SN - 0022-2461
IS - 16
ER -