Oxidation-induced stacking faults introduced by using a cavitating jet for gettering in silicon

H. Soyama, H. Kumano

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Oxidation-induced stacking faults (OSF) were successfully introduced by cavitation impacts followed by heat-treatment on the surface of a silicon wafer. Cavitation impacts caused by a cavitating jet were used, because the intensity of the cavitation impacts can easily be controlled by adjusting the injection pressure and the distance from the nozzle to the impinging surface. It is well known that OSF, produced after mechanical back-side damage from shot blasting, are effective as gettering sites. Silicon wafers exposed to cavitation impact were heat-treated to grow OSF. The existence of OSF shows that a cavitating jet can be used to introduce back-side damage for gettering.

Original languageEnglish
Pages (from-to)93-94
Number of pages2
JournalElectrochemical and Solid-State Letters
Volume3
Issue number2
DOIs
Publication statusPublished - 2000 Feb 1

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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