Oxidation Behavior of Germanium- and/or Silicon-Bearing Near-α Titanium Alloys in Air

Tomonori Kitashima, Yoko Yamabe-Mitarai

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

The effect of germanium (Ge) and/or silicon (Si) addition on the oxidation behavior of the near-α alloy Ti-5Al-2Sn-4Zr-2Mo was investigated in air at 973 K (700 °C). Ge addition decreased the oxidation resistance because of the formation of a Ge-rich layer in the substrate at the TiO2/substrate interface, enhancing Sn segregation at the interface. In addition, a small amount of Ge dissolved in the external Al2O3 layer. These results reduced the aluminum activity at the interface, suppressed the formation of Al2O3, and increased the diffusivity of oxygen in the oxide scales. The addition of 0.2 and 0.9 wt pct Si was beneficial for improving oxidation resistance. The effect of germanide and silicide precipitates in the matrix on the oxide growth process was also discussed.

Original languageEnglish
Pages (from-to)2758-2767
Number of pages10
JournalMetallurgical and Materials Transactions A: Physical Metallurgy and Materials Science
Volume46
Issue number6
DOIs
Publication statusPublished - 2015 Jun 1

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys

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