Abstract
The short history of the development in nitride semiconductors is described. As key issues for the future progress are concreted from this history, the polarity of crystal, the substrate for the epitaxial growth of nitride semiconductors, and emerging material, InN are introduced. The device applications including optical devices and transport devices are reviewed. Finally, this article looks into the future prospect of nitride semiconductors.
| Original language | English |
|---|---|
| Pages (from-to) | 1-8 |
| Number of pages | 8 |
| Journal | International Journal of Optomechatronics |
| Volume | 9 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2015 Jan 2 |
Keywords
- GaN
- InGaAlN
- MOVPE
- nitride semiconductors
- polarity
ASJC Scopus subject areas
- Instrumentation
- Mechanical Engineering
- Electrical and Electronic Engineering