Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

Takeshi Hamamoto, Takashi Ohsawa

    Research output: Contribution to journalArticlepeer-review

    17 Citations (Scopus)

    Abstract

    Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.

    Original languageEnglish
    Pages (from-to)676-683
    Number of pages8
    JournalSolid-State Electronics
    Volume53
    Issue number7
    DOIs
    Publication statusPublished - 2009 Jul

    Keywords

    • DRAM
    • Hot carriers
    • MOSFETs
    • Silicon-on-insulator (SOI) technology

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics
    • Electrical and Electronic Engineering
    • Materials Chemistry

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