Over 100 million frames per second high speed global shutter CMOS image sensor

R. Kuroda, M. Suzuki, S. Sugawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents advancement of ultra-high speed (UHS) global shutter CMOS image sensor technology exceeding 100M frames per second (fps). The development of key technologies toward the next generation UHS global shutter CMOS image sensor are overviewed, that includes high density analog memory integration, pixel-wise memory array architecture, and burst correlated double sampling (CDS) operation. By introducing the newly developed signal readout scheme with minimized pixel pulse transitions, a frame period of photo-electrons transit time is achieved. The fabricated chip prototyping a 3D stacked structure achieved 100Mfps with 80 record length and 125Mfps with 40 record length under room temperature without any cooling systems.

Original languageEnglish
Title of host publication32nd International Congress on High-Speed Imaging and Photonics
EditorsEleanor Stride, Michel Versluis
PublisherSPIE
ISBN (Electronic)9781510627772
DOIs
Publication statusPublished - 2019
Event32nd International Congress on High-Speed Imaging and Photonics, ICHSIP 2018 - Enschede, Netherlands
Duration: 2018 Oct 82018 Oct 12

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume11051
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference32nd International Congress on High-Speed Imaging and Photonics, ICHSIP 2018
Country/TerritoryNetherlands
CityEnschede
Period18/10/818/10/12

Keywords

  • 3D stacking
  • Analog memory
  • Burst CMOS image sensor
  • Burst correlated double sampling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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