TY - JOUR
T1 - Outgassing study of thin films used for poly-SiGe based vacuum packaging of MEMS
AU - Wang, B.
AU - Tanaka, S.
AU - Guo, B.
AU - Vereecke, G.
AU - Severi, S.
AU - Witvrouw, A.
AU - Wevers, M.
AU - De Wolf, I.
N1 - Funding Information:
The authors would like to acknowledge help from ESCO, Japan for the TDS measurements. One of the authors, S. Tanaka, was supported by the Japan Society for the Promotion of Science (JSPS) through its “Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program)”.
PY - 2011/9
Y1 - 2011/9
N2 - Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H2, H2O and CO2. The CO2 outgassing could be correlated with CF4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF4-plasma-cleaned interface.
AB - Thermal desorption spectroscopy (TDS) was used to study outgassing from polycrystalline SiGe (poly-SiGe), SiC and SiO2 films used for poly-SiGe-based MEMS thin film vacuum package technology. Primary desorption products were found to be H2, H2O and CO2. The CO2 outgassing could be correlated with CF4 plasma interface cleaning used for thick SiGe PECVD, which can leave carbon at the CF4-plasma-cleaned interface.
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U2 - 10.1016/j.microrel.2011.06.022
DO - 10.1016/j.microrel.2011.06.022
M3 - Article
AN - SCOPUS:80052924612
SN - 0026-2714
VL - 51
SP - 1878
EP - 1881
JO - Microelectronics Reliability
JF - Microelectronics Reliability
IS - 9-11
ER -