The generation processes of type-C defects on the Si(100)-(2×1) surface have been systematically investigated by using scanning tunneling microscopy and infrared absorption spectroscopy. We show that the type-C defect is extrinsic, being caused by bimolecular dissociative adsorption of H2O in the ultrahigh vacuum environment. A structural model of the type-C defect is proposed.
|Number of pages||4|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2002 Apr 15|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics