Abstract
The generation processes of type-C defects on the Si(100)-(2×1) surface have been systematically investigated by using scanning tunneling microscopy and infrared absorption spectroscopy. We show that the type-C defect is extrinsic, being caused by bimolecular dissociative adsorption of H2O in the ultrahigh vacuum environment. A structural model of the type-C defect is proposed.
Original language | English |
---|---|
Article number | 161302 |
Pages (from-to) | 1613021-1613024 |
Number of pages | 4 |
Journal | Physical Review B - Condensed Matter and Materials Physics |
Volume | 65 |
Issue number | 16 |
Publication status | Published - 2002 Apr 15 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics