Origin of type-C defects on the Si(100)-(2×1) surface

Masayasu Nishizawa, Tetsuji Yasuda, Satoshi Yamasaki, Kazushi Miki, Masanori Shinohara, Nozomu Kamakura, Yasuo Kimura, Michio Niwano

Research output: Contribution to journalArticlepeer-review

36 Citations (Scopus)


The generation processes of type-C defects on the Si(100)-(2×1) surface have been systematically investigated by using scanning tunneling microscopy and infrared absorption spectroscopy. We show that the type-C defect is extrinsic, being caused by bimolecular dissociative adsorption of H2O in the ultrahigh vacuum environment. A structural model of the type-C defect is proposed.

Original languageEnglish
Article number161302
Pages (from-to)1613021-1613024
Number of pages4
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number16
Publication statusPublished - 2002 Apr 15

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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