Origin of type-C defects on the Si(100)-(2×1) surface

Masayasu Nishizawa; Tetsuji Yasuda; Satoshi Yamasaki; Kazushi Miki; Masanori Shinohara; Nozomu Kamakura; Yasuo Kimura; Michio Niwano

Origin of type-C defects on the Si(100)-(2×1) surface

Masayasu Nishizawa, Tetsuji Yasuda, Satoshi Yamasaki, Kazushi Miki, Masanori Shinohara, Nozomu Kamakura, Yasuo Kimura, Michio Niwano

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36 Citations (Scopus)

Abstract

The generation processes of type-C defects on the Si(100)-(2×1) surface have been systematically investigated by using scanning tunneling microscopy and infrared absorption spectroscopy. We show that the type-C defect is extrinsic, being caused by bimolecular dissociative adsorption of H₂O in the ultrahigh vacuum environment. A structural model of the type-C defect is proposed.

Original language	English
Article number	161302
Pages (from-to)	1613021-1613024
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	65
Issue number	16
Publication status	Published - 2002 Apr 15

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Origin of type-C defects on the Si(100)-(2×1) surface. / Nishizawa, Masayasu; Yasuda, Tetsuji; Yamasaki, Satoshi; Miki, Kazushi; Shinohara, Masanori; Kamakura, Nozomu; Kimura, Yasuo; Niwano, Michio.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 16, 161302, 15.04.2002, p. 1613021-1613024.

Research output: Contribution to journal › Article › peer-review

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AU - Kamakura, Nozomu

AU - Kimura, Yasuo

AU - Niwano, Michio

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Origin of type-C defects on the Si(100)-(2×1) surface

Abstract

ASJC Scopus subject areas

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