The structure of Ge(105) grown on Si(105) was analyzed using scanning tunneling microscopy (STM) and first-principle calculations. The existence of a tensile surface strain in Si(105) and its relaxation with increased coverage of Ge was proved by the morphology evolution with an increased amount of Ge deposition. A stable model for the Ge(105)-(1×2) structure formed on the Si(105) surface was presented which includes the existence of surface strain.
|Number of pages||4|
|Journal||Physical review letters|
|Publication status||Published - 2002 Apr 29|
ASJC Scopus subject areas
- Physics and Astronomy(all)