Origin of the stability of Ge(105) on Si: A new structure model and surface strain relaxation

Y. Fujikawa, Y. Fujikawa, K. Akiyama, T. Nagao, T. Sakurai, M. G. Lagally, M. G. Lagally, T. Hashimoto, Y. Morikawa, Y. Morikawa, K. Terakura

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The structure of Ge(105) grown on Si(105) was analyzed using scanning tunneling microscopy (STM) and first-principle calculations. The existence of a tensile surface strain in Si(105) and its relaxation with increased coverage of Ge was proved by the morphology evolution with an increased amount of Ge deposition. A stable model for the Ge(105)-(1×2) structure formed on the Si(105) surface was presented which includes the existence of surface strain.

Original languageEnglish
Article number176101
Pages (from-to)1761011-1761014
Number of pages4
JournalPhysical review letters
Issue number17
Publication statusPublished - 2002 Apr 29
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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