Origin of surface-state photoemission intensity oscillation during Si epitaxial growth on a Si(100) surface

Y. Enta; T. Horie; N. Miyamoto; Y. Takakuwa; H. Sakamoto; H. Kato

doi:10.1016/0039-6028(94)91148-7

Origin of surface-state photoemission intensity oscillation during Si epitaxial growth on a Si(100) surface

Y. Enta, T. Horie, N. Miyamoto, Y. Takakuwa, H. Sakamoto, H. Kato

Micro System Integration Center (μSIC)

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

We performed "in-situ" ultraviolet photoelectron spectroscopy (UPS) measurements during both solid-source and gas-source molecular-beam homoepitaxial growths on Si(100) surfaces. We found that the photoelectron intensity associated with surface states periodically oscillates during Si epitaxial growth. We demonstrate that the UPS intensity oscillation is associated with the alternation between the 2 × 1 and the 1× 2 surface reconstructions on the Si(100) surface, which resulted from Si layer-by-layer growth.

Original language	English
Pages (from-to)	L797-L800
Journal	Surface Science
Volume	313
Issue number	1-2
DOIs	https://doi.org/10.1016/0039-6028(94)91148-7
Publication status	Published - 1994 Jun 20

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(94)91148-7

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title = "Origin of surface-state photoemission intensity oscillation during Si epitaxial growth on a Si(100) surface",

abstract = "We performed {"}in-situ{"} ultraviolet photoelectron spectroscopy (UPS) measurements during both solid-source and gas-source molecular-beam homoepitaxial growths on Si(100) surfaces. We found that the photoelectron intensity associated with surface states periodically oscillates during Si epitaxial growth. We demonstrate that the UPS intensity oscillation is associated with the alternation between the 2 × 1 and the 1× 2 surface reconstructions on the Si(100) surface, which resulted from Si layer-by-layer growth.",

author = "Y. Enta and T. Horie and N. Miyamoto and Y. Takakuwa and H. Sakamoto and H. Kato",

note = "Funding Information: The authorsg ratefullya cknowledgeu seful dis-cussionsw ith Prof. M. Suemitsu and Prof. M. Niwano, The authors are also grateful to Dr. T. Abukawaf or his helpful suggestionosn the polarization dependenceo f the photoemission.T his work is supportedi n part by a Grant-in-Aid for Scientific Research on Priority Areas from the Ministry of Education, Science and Culture of Japan.",

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doi = "10.1016/0039-6028(94)91148-7",

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T1 - Origin of surface-state photoemission intensity oscillation during Si epitaxial growth on a Si(100) surface

AU - Enta, Y.

AU - Horie, T.

AU - Miyamoto, N.

AU - Takakuwa, Y.

AU - Sakamoto, H.

AU - Kato, H.

N1 - Funding Information: The authorsg ratefullya cknowledgeu seful dis-cussionsw ith Prof. M. Suemitsu and Prof. M. Niwano, The authors are also grateful to Dr. T. Abukawaf or his helpful suggestionosn the polarization dependenceo f the photoemission.T his work is supportedi n part by a Grant-in-Aid for Scientific Research on Priority Areas from the Ministry of Education, Science and Culture of Japan.

PY - 1994/6/20

Y1 - 1994/6/20

N2 - We performed "in-situ" ultraviolet photoelectron spectroscopy (UPS) measurements during both solid-source and gas-source molecular-beam homoepitaxial growths on Si(100) surfaces. We found that the photoelectron intensity associated with surface states periodically oscillates during Si epitaxial growth. We demonstrate that the UPS intensity oscillation is associated with the alternation between the 2 × 1 and the 1× 2 surface reconstructions on the Si(100) surface, which resulted from Si layer-by-layer growth.

AB - We performed "in-situ" ultraviolet photoelectron spectroscopy (UPS) measurements during both solid-source and gas-source molecular-beam homoepitaxial growths on Si(100) surfaces. We found that the photoelectron intensity associated with surface states periodically oscillates during Si epitaxial growth. We demonstrate that the UPS intensity oscillation is associated with the alternation between the 2 × 1 and the 1× 2 surface reconstructions on the Si(100) surface, which resulted from Si layer-by-layer growth.

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JO - Surface Science

JF - Surface Science

IS - 1-2

ER -

Origin of surface-state photoemission intensity oscillation during Si epitaxial growth on a Si(100) surface

Abstract

ASJC Scopus subject areas

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