Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon

Lu Chung Chuang; Kensaku Maeda; Haruhiko Morito; Keiji Shiga; Kozo Fujiwara

doi:10.1016/j.mtla.2018.08.034

Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon

Lu Chung Chuang, Kensaku Maeda, Haruhiko Morito, Keiji Shiga, Kozo Fujiwara

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The formation of small-angle grain boundaries (SAGBs) during directional solidification of multicrystalline silicon was directly observed in situ. SAGBs were confirmed by preferential etching due to the aggregation of dislocations at the solid/melt interface. Dislocations self-arrange by polygonization into an energetically favorable SAGB configuration. The misorientation of the SAGBs increases during crystal growth, possibly through the continual incorporation of dislocations. The present results suggest that there is considerable dislocation motion at the solid/melt interface and polygonization can occur during solidification.

Original language	English
Pages (from-to)	347-352
Number of pages	6
Journal	Materialia
Volume	3
DOIs	https://doi.org/10.1016/j.mtla.2018.08.034
Publication status	Published - 2018 Nov

Keywords

Directional solidification
Dislocation
Grain boundary
Multicrystalline Si

ASJC Scopus subject areas

Materials Science(all)

Access to Document

10.1016/j.mtla.2018.08.034

Fingerprint Dive into the research topics of 'Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon'. Together they form a unique fingerprint.

Cite this

@article{99c95fb08cc04c13a74e4bb7cfe9fa5e,

title = "Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon",

abstract = "The formation of small-angle grain boundaries (SAGBs) during directional solidification of multicrystalline silicon was directly observed in situ. SAGBs were confirmed by preferential etching due to the aggregation of dislocations at the solid/melt interface. Dislocations self-arrange by polygonization into an energetically favorable SAGB configuration. The misorientation of the SAGBs increases during crystal growth, possibly through the continual incorporation of dislocations. The present results suggest that there is considerable dislocation motion at the solid/melt interface and polygonization can occur during solidification.",

keywords = "Directional solidification, Dislocation, Grain boundary, Multicrystalline Si",

author = "Chuang, {Lu Chung} and Kensaku Maeda and Haruhiko Morito and Keiji Shiga and Kozo Fujiwara",

note = "Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) - “Fund for the Promotion of Joint International Research (Fostering Joint International Research)” (No. 15KK0198 ) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: {\textcopyright} 2018 Copyright: Copyright 2020 Elsevier B.V., All rights reserved.",

year = "2018",

month = nov,

doi = "10.1016/j.mtla.2018.08.034",

language = "English",

volume = "3",

pages = "347--352",

journal = "Materialia",

issn = "2589-1529",

publisher = "Elsevier BV",

}

TY - JOUR

T1 - Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon

AU - Chuang, Lu Chung

AU - Maeda, Kensaku

AU - Morito, Haruhiko

AU - Shiga, Keiji

AU - Fujiwara, Kozo

N1 - Funding Information: This work was supported by a Kakenhi Grant-in-Aid for Scientific Research (A) (No. JP17H01336 ) and Grants-in-Aid for Scientific Research (Kakenhi (Multi-year Fund)) - “Fund for the Promotion of Joint International Research (Fostering Joint International Research)” (No. 15KK0198 ) from the Japan Society for the Promotion of Science (JSPS). Publisher Copyright: © 2018 Copyright: Copyright 2020 Elsevier B.V., All rights reserved.

PY - 2018/11

Y1 - 2018/11

N2 - The formation of small-angle grain boundaries (SAGBs) during directional solidification of multicrystalline silicon was directly observed in situ. SAGBs were confirmed by preferential etching due to the aggregation of dislocations at the solid/melt interface. Dislocations self-arrange by polygonization into an energetically favorable SAGB configuration. The misorientation of the SAGBs increases during crystal growth, possibly through the continual incorporation of dislocations. The present results suggest that there is considerable dislocation motion at the solid/melt interface and polygonization can occur during solidification.

AB - The formation of small-angle grain boundaries (SAGBs) during directional solidification of multicrystalline silicon was directly observed in situ. SAGBs were confirmed by preferential etching due to the aggregation of dislocations at the solid/melt interface. Dislocations self-arrange by polygonization into an energetically favorable SAGB configuration. The misorientation of the SAGBs increases during crystal growth, possibly through the continual incorporation of dislocations. The present results suggest that there is considerable dislocation motion at the solid/melt interface and polygonization can occur during solidification.

KW - Directional solidification

KW - Dislocation

KW - Grain boundary

KW - Multicrystalline Si

UR - http://www.scopus.com/inward/record.url?scp=85061033093&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85061033093&partnerID=8YFLogxK

U2 - 10.1016/j.mtla.2018.08.034

DO - 10.1016/j.mtla.2018.08.034

M3 - Article

AN - SCOPUS:85061033093

VL - 3

SP - 347

EP - 352

JO - Materialia

JF - Materialia

SN - 2589-1529

ER -

Origin of small-angle grain boundaries during directional solidification in multicrystalline silicon

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Cite this