Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors

Yen Fu Lin, Yong Xu, Che Yi Lin, Yuen Wuu Suen, Mahito Yamamoto, Shu Nakaharai, Keiji Ueno, Kazuhito Tsukagoshi

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type α-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition-metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.

Original languageEnglish
Pages (from-to)6612-6619
Number of pages8
JournalAdvanced Materials
Volume27
Issue number42
DOIs
Publication statusPublished - 2015 Nov 1
Externally publishedYes

Keywords

  • low-frequency noise
  • MoTe
  • nanoscale electronics
  • random telegraph signals
  • transition metal dichalcogenides

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Lin, Y. F., Xu, Y., Lin, C. Y., Suen, Y. W., Yamamoto, M., Nakaharai, S., Ueno, K., & Tsukagoshi, K. (2015). Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors. Advanced Materials, 27(42), 6612-6619. https://doi.org/10.1002/adma.201502677