Origin of Noise in Layered MoTe2 Transistors and its Possible Use for Environmental Sensors

Yen Fu Lin; Yong Xu; Che Yi Lin; Yuen Wuu Suen; Mahito Yamamoto; Shu Nakaharai; Keiji Ueno; Kazuhito Tsukagoshi

doi:10.1002/adma.201502677

Origin of Noise in Layered MoTe₂ Transistors and its Possible Use for Environmental Sensors

Yen Fu Lin, Yong Xu, Che Yi Lin, Yuen Wuu Suen, Mahito Yamamoto, Shu Nakaharai, Keiji Ueno, Kazuhito Tsukagoshi

Research output: Contribution to journal › Article › peer-review

61 Citations (Scopus)

Abstract

Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type α-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition-metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.

Original language	English
Pages (from-to)	6612-6619
Number of pages	8
Journal	Advanced Materials
Volume	27
Issue number	42
DOIs	https://doi.org/10.1002/adma.201502677
Publication status	Published - 2015 Nov 1
Externally published	Yes

Keywords

low-frequency noise
MoTe
nanoscale electronics
random telegraph signals
transition metal dichalcogenides

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1002/adma.201502677

Cite this

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abstract = "Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type α-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition-metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.",

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AU - Yamamoto, Mahito

AU - Nakaharai, Shu

AU - Ueno, Keiji

AU - Tsukagoshi, Kazuhito

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