Abstract
Low-frequency current fluctuations are monitored and the mechanism of electric noise investigated in layered 2H-type α-molybdenum ditelluride transistors. The charge transport mechanism of electric noise in atomically thin transition-metal dichalcogenides is studied under different environments; the development of a new sensing functionality may be stimulated.
Original language | English |
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Pages (from-to) | 6612-6619 |
Number of pages | 8 |
Journal | Advanced Materials |
Volume | 27 |
Issue number | 42 |
DOIs | |
Publication status | Published - 2015 Nov 1 |
Externally published | Yes |
Keywords
- low-frequency noise
- MoTe
- nanoscale electronics
- random telegraph signals
- transition metal dichalcogenides
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering