Origin of forward leakage current in GaN-based light-emitting devices

S. W. Lee, D. C. Oh, H. Goto, J. S. Ha, H. J. Lee, T. Hanada, M. W. Cho, T. Yao, S. K. Hong, H. Y. Lee, S. R. Cho, J. W. Choi, J. H. Choi, J. H. Jang, J. E. Shin, J. S. Lee

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152 Citations (Scopus)


The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template (∼2 μm) with high dislocation density [low (109 cm -2)] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN template (∼20 μm) with comparatively low dislocation density [high (108 cm-2)] by hydride vapor-phase epitaxy (sample B). In order to understand the mechanism of leakage current in LEDs, the correlation between current-voltage characteristics and etch pit density of LEDs was studied.

Original languageEnglish
Article number132117
JournalApplied Physics Letters
Issue number13
Publication statusPublished - 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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