The authors fabricated GaN-based light-emitting diodes (LEDs) on two different GaN templates with the same LED structure. One on thin GaN template (∼2 μm) with high dislocation density [low (109 cm -2)] grown by metal-organic vapor-phase epitaxy (sample A) and the other on thick GaN template (∼20 μm) with comparatively low dislocation density [high (108 cm-2)] by hydride vapor-phase epitaxy (sample B). In order to understand the mechanism of leakage current in LEDs, the correlation between current-voltage characteristics and etch pit density of LEDs was studied.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)