Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors

Noriyuki Miyata, Hiroyuki Ishii, Yuji Urabe, Taro Itatani, Tetsuji Yasuda, Hisashi Yamada, Noboru Fukuhara, Masahiko Hata, Momoko Deura, Masakazu Sugiyama, Mitsuru Takenaka, Shinichi Takagi

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

Electrical and physical characteristics of the Al2O 3/InGaAs interfaces with (1 1 1)A and (1 0 0) orientations were investigated in an attempt to understand the origin of electron mobility enhancement in the (1 1 1)A-channel metal-insulator-semiconductor field-effect-transistor. The (1 1 1)A interface has less As atoms of high oxidation states as probed by X-ray photoelectron spectroscopy. The electrical measurements showed that energy distribution of the interface traps for the (1 1 1)A interface is shifted toward the conduction band as compared to that for the (1 0 0) interface. Laterally-compressed cross-section transmission electron microscopy images showed that the characteristic lengths of the interface roughness are different between the (1 1 1)A and (1 0 0) interfaces. The contributions of the Coulomb and roughness scattering mechanisms are discussed based on the experimental results.

Original languageEnglish
Pages (from-to)3459-3461
Number of pages3
JournalMicroelectronic Engineering
Volume88
Issue number12
DOIs
Publication statusPublished - 2011 Dec 1

Keywords

  • Electron mobility
  • III-V semiconductor
  • InGaAs
  • Interface traps
  • MISFET

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Origin of electron mobility enhancement in (1 1 1)-oriented InGaAs channel metal-insulator-semiconductor field-effect-transistors'. Together they form a unique fingerprint.

Cite this