Origin of characteristic variability in metal-oxide-semiconductor field-effect transistors revealed by three-dimensional atom imaging

H. Takamizawa, Y. Shimizu, K. Inoue, T. Toyama, N. Okada, M. Kato, H. Uchida, F. Yano, A. Nishida, T. Mogami, Y. Nagai

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The greater variability in the electrical properties of n-type metal-oxide-semiconductor field-effect transistors (MOSFETs) compared with those of p-type MOSFETs poses problems for scaling of silicon based large-scale integration technology. We have elucidated the origin of the variability difference between n- and p-type transistors by using laser-assisted atom probe tomography to directly count the number of discrete atoms in local regions. We found that ion implantation and activation annealing for source/drain extension fabrication enhances anomalous dopant fluctuations of boron atoms in n-MOSFET channel regions, interpreted by fast migration of boron atoms.

Original languageEnglish
Article number133502
JournalApplied Physics Letters
Volume99
Issue number13
DOIs
Publication statusPublished - 2011 Sep 26

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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