Origin of a pair of stacking faults in pseudomorphic ZnSe epitaxial layers on GaAs

Y. Ohno, N. Adachi, S. Takeda

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Origin of stacking faults in pseudomorphic ZnSe epitaxial layers grown on GaAs substrates was investigated. Structural images of the defects taken by means of high-resolution transmission electron microscopy were analyzed. It was found that Ga, As, and Se atoms form the specific reconstructed structure with relatively low formation energy.

Original languageEnglish
Pages (from-to)54-56
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number1
DOIs
Publication statusPublished - 2003 Jul 7
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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