Origin of a pair of stacking faults in pseudomorphic ZnSe epitaxial layers on GaAs

Y. Ohno, N. Adachi, S. Takeda

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

Origin of stacking faults in pseudomorphic ZnSe epitaxial layers grown on GaAs substrates was investigated. Structural images of the defects taken by means of high-resolution transmission electron microscopy were analyzed. It was found that Ga, As, and Se atoms form the specific reconstructed structure with relatively low formation energy.

Original languageEnglish
Pages (from-to)54-56
Number of pages3
JournalApplied Physics Letters
Volume83
Issue number1
DOIs
Publication statusPublished - 2003 Jul 7
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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