Oriented film growth of organic semiconductor sexithiophene on artificial periodic grooves and electrical conduction properties of the films

Susumu Ikeda, Yasuo Wada, Katsuhiko Inaba, Kazuo Terashima, Toshihiro Shimada, Koichiro Saiki

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Film growth of organic semiconductor a-sexithiophene (6T) was studied using substrates with artificial periodic grooves. The grooves were fabricated on thermally oxidized silicon substrates by electron beam lithography. Based on the orientation analysis by atomic force microscopy and grazing-incidence x-ray diffraction, part of the 6T grains grew having the in-plane orientational relationship with the artificial grooves. This phenomenon corresponds to "graphoepitaxy" which has been well known in inorganic materials research field. As well as the in-plane preferred orientation, one-dimensional structure consisting of connected 6T grains was observed. The electrical conduction properties of the films were also evaluated.

Original languageEnglish
Pages (from-to)113-118
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume1059
Publication statusPublished - 2008 Dec 1
Externally publishedYes
EventNanoscale Pattern Formation - Boston, MA, United States
Duration: 2007 Nov 262007 Nov 30

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Oriented film growth of organic semiconductor sexithiophene on artificial periodic grooves and electrical conduction properties of the films'. Together they form a unique fingerprint.

Cite this