TY - JOUR
T1 - Orientation of organic semiconductor films on photoreactive polyimide films and its influence on field-effect transistor characteristics
AU - Kikuchi, Hiroshi
AU - Uchida, Yuichiro
AU - Fujisaki, Yoshihide
AU - Sato, Hiroto
AU - Fujikake, Hideo
AU - Kurita, Taiichiro
AU - Takizawa, Kuniharu
AU - Sato, Fumio
N1 - Copyright:
Copyright 2009 Elsevier B.V., All rights reserved.
PY - 2006
Y1 - 2006
N2 - In this study, we have investigated the effect of surface treatment on the orientation and mobility of pentacene by using a photoreactive polyimide film to modify the gate-insulator surfaces of organic field effect transistors (OFETs). Surface modification includes a photoreactive polyimide film, presenting a passivated interface on which the semiconductor can grow. This polyimide film can control of the orientation of semiconductor by using linearly polarized deep UV (LPDUV) irradiation. Fabricated OFETs include stacked structures of Ta 2O5 as the gate insulators and the photoreactive polyimide. Most of the characteristic parameters of the OFETs, such as carrier mobility and on/off current ration, have been improved by using the photo-alignment treatment achieved with LPDUV irradiation.
AB - In this study, we have investigated the effect of surface treatment on the orientation and mobility of pentacene by using a photoreactive polyimide film to modify the gate-insulator surfaces of organic field effect transistors (OFETs). Surface modification includes a photoreactive polyimide film, presenting a passivated interface on which the semiconductor can grow. This polyimide film can control of the orientation of semiconductor by using linearly polarized deep UV (LPDUV) irradiation. Fabricated OFETs include stacked structures of Ta 2O5 as the gate insulators and the photoreactive polyimide. Most of the characteristic parameters of the OFETs, such as carrier mobility and on/off current ration, have been improved by using the photo-alignment treatment achieved with LPDUV irradiation.
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M3 - Article
AN - SCOPUS:67249097913
JO - Nippon Hoso Kyokai-NHK Laboratories Note
JF - Nippon Hoso Kyokai-NHK Laboratories Note
SN - 0027-657X
IS - 497
ER -