Orientation control of α-Al2O3 films prepared by laser chemical vapor deposition using a diode laser

Yu You, Akihiko Ito, Rong Tu, Takashi Goto

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

(006)-, (104)- and (012)-oriented α-Al2O3 films in a single phase were prepared by laser chemical vapor deposition (LCVD) using a diode laser. The effects of laser power (PL), deposition temperature (Tdep) and total pressure (Ptot) on the crystal phase, orientation, microstructure and deposition rate (Rdep) were investigated. The orientation of α-Al2O3 films changed from (006) to (104) to (012) with increasing PL. Higher oriented films were deposited at a lower Ptot. The microstructure of α-Al2O3 films changed from a cauliflower-like structure to a hexagonal faceted structure to a pyramid-like structure with increasing PL. The Rdep of oriented α-Al 2O3 films slightly increased from 30 to 40μm·h-1 with decreasing PL, which was about 50 times greater than that of conventional thermal CVD.

Original languageEnglish
Pages (from-to)366-369
Number of pages4
JournalJournal of the Ceramic Society of Japan
Volume118
Issue number1377
DOIs
Publication statusPublished - 2010 May

Keywords

  • Laser CVD
  • Orientation
  • α-AlO

ASJC Scopus subject areas

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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