Single phase perovskite lead titanate thin films were successfully deposited on Si wafer with platinum electrode at 450 °C through sol-gel method from precursor solution with 20 mol% excess lead precursor. The degree of c-axis orientation of the resultant film increased with increase of lead content. The ferroelectricities of resultant films annealed at 450 °C were significantly affected by pre-annealing temperature.
|Number of pages||4|
|Journal||Key Engineering Materials|
|Publication status||Published - 1999 Jan 1|
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering