Organic spin valves with poly(vinylidene fluoride) barriers

Xianmin Zhang; Jiaxin Lin; Runxin Zhang; Gaowu Qin; Huie Zhu; Tokuji Miyashita; Masaya Mitsuishi

doi:10.1109/INEC.2016.7589269

Organic spin valves with poly(vinylidene fluoride) barriers

Xianmin Zhang, Jiaxin Lin, Runxin Zhang, Gaowu Qin, Huie Zhu, Tokuji Miyashita, Masaya Mitsuishi

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Poly(vinylidene fluoride) (PVDF) was used as an organic spacer to fabricate spin-valve devices for the first time. Their magnetoresistance (MR) effects with different layer numbers of PVDF were investigated at both room and low temperatures. The device resistances and MR ratios increase with decreasing measurement temperature. It is noted that the MR ratios at room temperature are over 2% and 0.5% for devices with 3 layers and 13 layers of PVDF, respectively.

Original language	English
Title of host publication	7th IEEE International Nanoelectronics Conference 2016, INEC 2016
Publisher	IEEE Computer Society
ISBN (Electronic)	9781467389693
DOIs	https://doi.org/10.1109/INEC.2016.7589269
Publication status	Published - 2016 Oct 12
Event	7th IEEE International Nanoelectronics Conference, INEC 2016 - Chengdu, China Duration: 2016 May 9 → 2016 May 11

Publication series

Name	Proceedings - International NanoElectronics Conference, INEC
Volume	2016-October
ISSN (Print)	2159-3523

Other

Other	7th IEEE International Nanoelectronics Conference, INEC 2016
Country/Territory	China
City	Chengdu
Period	16/5/9 → 16/5/11

Keywords

Poly(vinylidene fluoride)
magnetoresistance

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/INEC.2016.7589269

Cite this

Zhang, X., Lin, J., Zhang, R., Qin, G., Zhu, H., Miyashita, T., & Mitsuishi, M. (2016). Organic spin valves with poly(vinylidene fluoride) barriers. In 7th IEEE International Nanoelectronics Conference 2016, INEC 2016 [7589269] (Proceedings - International NanoElectronics Conference, INEC; Vol. 2016-October). IEEE Computer Society. https://doi.org/10.1109/INEC.2016.7589269

Organic spin valves with poly(vinylidene fluoride) barriers. / Zhang, Xianmin; Lin, Jiaxin; Zhang, Runxin et al.

7th IEEE International Nanoelectronics Conference 2016, INEC 2016. IEEE Computer Society, 2016. 7589269 (Proceedings - International NanoElectronics Conference, INEC; Vol. 2016-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, X, Lin, J, Zhang, R, Qin, G, Zhu, H, Miyashita, T & Mitsuishi, M 2016, Organic spin valves with poly(vinylidene fluoride) barriers. in 7th IEEE International Nanoelectronics Conference 2016, INEC 2016., 7589269, Proceedings - International NanoElectronics Conference, INEC, vol. 2016-October, IEEE Computer Society, 7th IEEE International Nanoelectronics Conference, INEC 2016, Chengdu, China, 16/5/9. https://doi.org/10.1109/INEC.2016.7589269

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title = "Organic spin valves with poly(vinylidene fluoride) barriers",

abstract = "Poly(vinylidene fluoride) (PVDF) was used as an organic spacer to fabricate spin-valve devices for the first time. Their magnetoresistance (MR) effects with different layer numbers of PVDF were investigated at both room and low temperatures. The device resistances and MR ratios increase with decreasing measurement temperature. It is noted that the MR ratios at room temperature are over 2% and 0.5% for devices with 3 layers and 13 layers of PVDF, respectively.",

keywords = "Poly(vinylidene fluoride), magnetoresistance",

author = "Xianmin Zhang and Jiaxin Lin and Runxin Zhang and Gaowu Qin and Huie Zhu and Tokuji Miyashita and Masaya Mitsuishi",

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day = "12",

doi = "10.1109/INEC.2016.7589269",

language = "English",

series = "Proceedings - International NanoElectronics Conference, INEC",

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T1 - Organic spin valves with poly(vinylidene fluoride) barriers

AU - Zhang, Xianmin

AU - Lin, Jiaxin

AU - Zhang, Runxin

AU - Qin, Gaowu

AU - Zhu, Huie

AU - Miyashita, Tokuji

AU - Mitsuishi, Masaya

PY - 2016/10/12

Y1 - 2016/10/12

N2 - Poly(vinylidene fluoride) (PVDF) was used as an organic spacer to fabricate spin-valve devices for the first time. Their magnetoresistance (MR) effects with different layer numbers of PVDF were investigated at both room and low temperatures. The device resistances and MR ratios increase with decreasing measurement temperature. It is noted that the MR ratios at room temperature are over 2% and 0.5% for devices with 3 layers and 13 layers of PVDF, respectively.

AB - Poly(vinylidene fluoride) (PVDF) was used as an organic spacer to fabricate spin-valve devices for the first time. Their magnetoresistance (MR) effects with different layer numbers of PVDF were investigated at both room and low temperatures. The device resistances and MR ratios increase with decreasing measurement temperature. It is noted that the MR ratios at room temperature are over 2% and 0.5% for devices with 3 layers and 13 layers of PVDF, respectively.

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T3 - Proceedings - International NanoElectronics Conference, INEC

BT - 7th IEEE International Nanoelectronics Conference 2016, INEC 2016

PB - IEEE Computer Society

T2 - 7th IEEE International Nanoelectronics Conference, INEC 2016

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ER -

Organic spin valves with poly(vinylidene fluoride) barriers

Abstract

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Keywords

ASJC Scopus subject areas

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