TY - GEN
T1 - Organic spin valves with poly(vinylidene fluoride) barriers
AU - Zhang, Xianmin
AU - Lin, Jiaxin
AU - Zhang, Runxin
AU - Qin, Gaowu
AU - Zhu, Huie
AU - Miyashita, Tokuji
AU - Mitsuishi, Masaya
PY - 2016/10/12
Y1 - 2016/10/12
N2 - Poly(vinylidene fluoride) (PVDF) was used as an organic spacer to fabricate spin-valve devices for the first time. Their magnetoresistance (MR) effects with different layer numbers of PVDF were investigated at both room and low temperatures. The device resistances and MR ratios increase with decreasing measurement temperature. It is noted that the MR ratios at room temperature are over 2% and 0.5% for devices with 3 layers and 13 layers of PVDF, respectively.
AB - Poly(vinylidene fluoride) (PVDF) was used as an organic spacer to fabricate spin-valve devices for the first time. Their magnetoresistance (MR) effects with different layer numbers of PVDF were investigated at both room and low temperatures. The device resistances and MR ratios increase with decreasing measurement temperature. It is noted that the MR ratios at room temperature are over 2% and 0.5% for devices with 3 layers and 13 layers of PVDF, respectively.
KW - Poly(vinylidene fluoride)
KW - magnetoresistance
UR - http://www.scopus.com/inward/record.url?scp=84992709162&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84992709162&partnerID=8YFLogxK
U2 - 10.1109/INEC.2016.7589269
DO - 10.1109/INEC.2016.7589269
M3 - Conference contribution
AN - SCOPUS:84992709162
T3 - Proceedings - International NanoElectronics Conference, INEC
BT - 7th IEEE International Nanoelectronics Conference 2016, INEC 2016
PB - IEEE Computer Society
T2 - 7th IEEE International Nanoelectronics Conference, INEC 2016
Y2 - 9 May 2016 through 11 May 2016
ER -