Organic pseudo-CMOS circuits for low-voltage large-gain high-speed operation

Kenjiro Fukuda, Tsuyoshi Sekitani, Tomoyuki Yokota, Kazunori Kuribara, Tsung Ching Huang, Takayasu Sakurai, Ute Zschieschang, Hagen Klauk, Masaaki Ikeda, Hirokazu Kuwabara, Tatsuya Yamamoto, Kazuo Takimiya, Kwang Ting Cheng, Takao Someya

Research output: Contribution to journalArticlepeer-review

40 Citations (Scopus)

Abstract

Pseudo-CMOS inverters operating at 2 V and comprising four p-type organic transistors with ultrahigh gain are fabricated using self-assembled monolayer gate dielectrics. The inverter gain is as large as 302 at an operation voltage of 2 V, whereas the minimum operation voltage is as small as 0.5 V. The oscillation frequency of a five-stage ring oscillator comprising pseudo-CMOS inverters is 4.27 kHz at 2 V, corresponding to 23.4 μs of propagation delay per stage. This is the fastest among organic circuits operating at low voltage. Pseudo-CMOS amplifier circuits show a large gain of 240 for a 3.0-mV input voltage.

Original languageEnglish
Article number5978175
Pages (from-to)1448-1450
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number10
DOIs
Publication statusPublished - 2011 Oct
Externally publishedYes

Keywords

  • Design for manufacture
  • logic circuits
  • organic materials
  • organic thin-film transistors (TFTs)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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