Organic magnetoresistance in ambipolar field-effect transistors

Song Toan Pham, Yoshitaka Kawasugi, Hirokazu Tada

    Research output: Contribution to journalArticlepeer-review

    15 Citations (Scopus)

    Abstract

    Magnetoresistance (MR) in ambipolar field-effect transistors (FETs) consisting of bilayers of pentacene (C22H14, PEN) and perfluoropentacene (C22F14, PFP) was studied. The ambipolar FET exhibits positive MR of approximately 1 at 100 mT and room temperature. This effect is considered to originate from the accumulated carriers at the interface between PEN and PFP. The gate voltage dependence showed that MR was enhanced with increasing number of electrons and holes accumulated at the PFP-PEN interface. The observed results support the proposed double-carrier models as the mechanism of organic magnetoresistance.

    Original languageEnglish
    Article number143301
    JournalApplied Physics Letters
    Volume103
    Issue number14
    DOIs
    Publication statusPublished - 2013

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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