TY - JOUR
T1 - Organic light-emitting diode driven by organic thin film transistor on plastic substrates
AU - Tsukagoshi, Kazuhito
AU - Tanabe, Jun
AU - Yagi, Iwao
AU - Shigeto, Kunji
AU - Yanagisawa, Keiichi
AU - Aoyagi, Yoshinobu
N1 - Funding Information:
The authors would like to thank K. Nomoto, N. Yoneya, M. Noda, N. Hirai, M. Wada, and J. Kasahara for valuable discussions. This work was supported in part by a Grant-In-Aid for Scientific Research (No. 16GS50219) from the Ministry of Education, Culture, Sport, Science and Technology of Japan. FIG. 1. (a) Schematic showing dimensions of the pixel unit consisting of an OLED and OTFT. (b) Circuit diagram for a pixel unit. (c) Schematic cross section of the stacked configuration of OLED and OTFT. FIG. 2. (Color) Structural optimization of the OLED. (a) Relationship among current density J , applied voltage V , and luminance L for the starting structure of ITO∕TPD ( 50 nm ) ∕coumarin6-doped Al q 3 ( 0.96 % , 20 nm ) ∕ Al q 3 ( 30 nm ) ∕ Li F ( 1.0 nm ) ∕ Al ( 100 nm ) . The inset shows emission from the 5 × 5 mm 2 OLED. (b) Variation in luminance efficiency η with coumarin6 concentration. (c) Dependence of η and J on thickness ratio of doped Al q 3 layer (1.6% coumarin6). (d) Dependence of η and J on thickness of doped Al q 3 layer (1.6% coumarin6). FIG. 3. (a) Schematic of fabricated OLED. The inset shows TCNQ layer at the interface between the TPD layer and the transparent ITO anode. (b) Semilogarithmic plot of V ‐ J characteristic for comparison of emission voltages with and without the TCNQ layer. J ‐ V ‐ L characteristic for OLEDs (c) without and (d) with the TCNQ layer. FIG. 4. (Color) Characterizations of surface roughness and transmittance of IWO and diX-C films formed on quartz substrates without heating. [(a)–(c)] AFM images of the 3 × 3 μ m 2 area of (a) IWO ( 200 nm ) , (b) IWO ( 200 nm ) ∕ diX ‐ C ( 800 nm ) , and (c) diX-C ( 800 nm ) films on quartz. (d) Transmittance of the three films. FIG. 5. (Color) (a) Optical microscope image of OTFT in matrix configuration before OLED formation. (b) Magnified image of OTFT with IWO electrode. (c) Variation of J and L with OTFT gate voltage V G on glass, (d) emission image of OLED on glass under ambient light, (e) J ‐ V G ‐ L characteristics for same device on a PEN substrate, and (f) emission image from OLED on plastic under ambient light.
PY - 2006
Y1 - 2006
N2 - A method for fabricating an organic light-emitting diode (OLED) connected to an organic thin film transistor (OTFT) on plastic substrates without heating is proposed. A three-dimensional pixel structure consisting of an OLED and an OTFT is prepared by the proposed method, and the characteristics of the device are tuned by refinement of structural parameters. By room-temperature fabrication, the OTFT with passivation film can be formed on a poly(ethylene naphthalate) plastic substrate, and the transparent anode of the OLED can be fabricated on the passivation film directly. OLED emission is thus generated directly by the current flowing through the OTFT, and the emission intensity is fully controllable by the gate voltage.
AB - A method for fabricating an organic light-emitting diode (OLED) connected to an organic thin film transistor (OTFT) on plastic substrates without heating is proposed. A three-dimensional pixel structure consisting of an OLED and an OTFT is prepared by the proposed method, and the characteristics of the device are tuned by refinement of structural parameters. By room-temperature fabrication, the OTFT with passivation film can be formed on a poly(ethylene naphthalate) plastic substrate, and the transparent anode of the OLED can be fabricated on the passivation film directly. OLED emission is thus generated directly by the current flowing through the OTFT, and the emission intensity is fully controllable by the gate voltage.
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U2 - 10.1063/1.2184430
DO - 10.1063/1.2184430
M3 - Article
AN - SCOPUS:33645667098
VL - 99
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 6
M1 - 064506
ER -