TY - JOUR
T1 - Organic light-emitting diode driven by organic thin film transistor on plastic substrates
AU - Tsukagoshi, Kazuhito
AU - Tanabe, Jun
AU - Yagi, Iwao
AU - Shigeto, Kunji
AU - Yanagisawa, Keiichi
AU - Aoyagi, Yoshinobu
N1 - Funding Information:
The authors would like to thank K. Nomoto, N. Yoneya, M. Noda, N. Hirai, M. Wada, and J. Kasahara for valuable discussions. This work was supported in part by a Grant-In-Aid for Scientific Research (No. 16GS50219) from the Ministry of Education, Culture, Sport, Science and Technology of Japan.
PY - 2006
Y1 - 2006
N2 - A method for fabricating an organic light-emitting diode (OLED) connected to an organic thin film transistor (OTFT) on plastic substrates without heating is proposed. A three-dimensional pixel structure consisting of an OLED and an OTFT is prepared by the proposed method, and the characteristics of the device are tuned by refinement of structural parameters. By room-temperature fabrication, the OTFT with passivation film can be formed on a poly(ethylene naphthalate) plastic substrate, and the transparent anode of the OLED can be fabricated on the passivation film directly. OLED emission is thus generated directly by the current flowing through the OTFT, and the emission intensity is fully controllable by the gate voltage.
AB - A method for fabricating an organic light-emitting diode (OLED) connected to an organic thin film transistor (OTFT) on plastic substrates without heating is proposed. A three-dimensional pixel structure consisting of an OLED and an OTFT is prepared by the proposed method, and the characteristics of the device are tuned by refinement of structural parameters. By room-temperature fabrication, the OTFT with passivation film can be formed on a poly(ethylene naphthalate) plastic substrate, and the transparent anode of the OLED can be fabricated on the passivation film directly. OLED emission is thus generated directly by the current flowing through the OTFT, and the emission intensity is fully controllable by the gate voltage.
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U2 - 10.1063/1.2184430
DO - 10.1063/1.2184430
M3 - Article
AN - SCOPUS:33645667098
VL - 99
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 6
M1 - 064506
ER -