Organic field-effect transistor using oligoselenophene as an active layer

Yoshihito Kunugi, Kazuo Takimiya, Kiwamu Yamane, Kazuo Yamashita, Yoshio Aso, Tetsuo Otsubo

Research output: Contribution to journalArticlepeer-review

85 Citations (Scopus)

Abstract

The organic field-effect transistor using the oligoselenophene as an active layer has been first successfully fabricated. 2,2′:5′,2″:5″,2‴-Quaterselenophene (4S) showed p-channel characteristics and the best mobility of 3.6 × 10-3 cm-2 V-1 s-1 was obtained for the film prepared at a substrate temperature of 60 °C, which is the same with that of the vapor deposited quaterthiophene film.

Original languageEnglish
Pages (from-to)6-7
Number of pages2
JournalChemistry of Materials
Volume15
Issue number1
DOIs
Publication statusPublished - 2003 Jan 14
Externally publishedYes

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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