Organic ferroelectric field-effect transistor memories with poly(vinylidene fluoride) gate insulators and conjugated semiconductor channels: a review

Research output: Contribution to journalReview articlepeer-review

2 Citations (Scopus)

Abstract

Organic electronics have attracted considerable interest because of their low temperature solution processability, versatile material synthesis and compatibility with a wide range of traditional fabrication methods such as rod-coating, inkjet and roll-to-roll printing techniques. Organic ferroelectric field-effect transistors (OFeFETs) with a three-terminal device architecture have ferroelectric thin films as gate insulator layers and semiconductor films as charge transport channel layers. OFeFETs have been demonstrated with non-volatile memory functions that can retain their high or low conductive states in the semiconductor channel when the power is turned off. The reversible polarization switching in the ferroelectric gate insulator layer between two stable polarized states provides the basis for binary coded memory functions. In this review, we summarize recent development of OFeFETs based on ferroelectric poly(vinylidene fluoride) dielectrics and organic semiconductor channels.

Original languageEnglish
Pages (from-to)404-413
Number of pages10
JournalPolymer International
Volume70
Issue number4
DOIs
Publication statusPublished - 2021 Apr

Keywords

  • OFeFET
  • ferroelectric polymer
  • non-volatile memory
  • organic semiconductor

ASJC Scopus subject areas

  • Polymers and Plastics
  • Organic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Organic ferroelectric field-effect transistor memories with poly(vinylidene fluoride) gate insulators and conjugated semiconductor channels: a review'. Together they form a unique fingerprint.

Cite this