Ordered dopant arrays in semiconductors by single ion implantation

Takahiro Shinada, Shintaro Okamoto, Tomonori Kurosawa, Takahiro Kobayashi, Hideki Nakayama, Domingo Ferrer, Iwao Ohdomari

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Continued challenge for higher-performance semiconductor device requires the controlled doping of single-dopant atom to control the electrical properties 1-6. Here we report the fabrication of semiconductors with both dopant number and position controlled by using a one-by-one doping technique, which we call "single-ion implantation (SII)" 7-10. This technique enables us to implant dopant ions one-by-one into a fine semiconductor region until the necessary number is reached. Electrical measurements reveal that the threshold voltage (V th,) fluctuation for the ordered dopant arrays is less than for conventional random doping. We also find that the device with ordered dopant array exhibits two times the lower average value (- 0.4V) of V th shift than the random dopant distribution (-0.2V). We conclude that the observed lower value originates from the uniformity of electrostatic potential in the channel region due to the ordered distribution of dopant atoms. The ordered dopant arrays may increase the prospects of fluctuation-controlled advanced silicon transistors.

Original languageEnglish
Title of host publicationProceedings of the 5th International Conference on Semiconductor Technology, ISTC 2006
Pages361-366
Number of pages6
Publication statusPublished - 2006 Sep 29
Externally publishedYes
Event5th International Conference on Semiconductor Technology, ISTC 2006 - Shanghai, China
Duration: 2006 Mar 212006 Mar 23

Publication series

NameProceedings - Electrochemical Society
VolumePV 2006-03

Other

Other5th International Conference on Semiconductor Technology, ISTC 2006
CountryChina
CityShanghai
Period06/3/2106/3/23

ASJC Scopus subject areas

  • Engineering(all)

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