Orbital susceptibility of higher stage GICs

R. Saito; H. Kamimura

doi:10.1016/0379-6779(85)90125-0

Orbital susceptibility of higher stage GICs

R. Saito, H. Kamimura

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The calculated results of orbital susceptibility for 1st to 5th stage GICs with charge transfer f=1.0 are presented. In this calculation the effective Hamiltonian to reproduce the self-consistent band structures of higher stage GICs are first introduced. Then the effect of the inhomogeneous charge distribution along the c-axis are clarified. It is shown that the interband effect between π-bands split by the inhomogeneous charge distribution plays an essential role in producing the paramagnetic orbital susceptibility in lower stages and in determining the stage dependence. Theoretical results of the stage dependence of orbital susceptibility with f=1.0 are in good agreement with observed ones.

Original language	English
Pages (from-to)	295-300
Number of pages	6
Journal	Synthetic Metals
Volume	12
Issue number	1-2
DOIs	https://doi.org/10.1016/0379-6779(85)90125-0
Publication status	Published - 1985 Jan 1
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

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abstract = "The calculated results of orbital susceptibility for 1st to 5th stage GICs with charge transfer f=1.0 are presented. In this calculation the effective Hamiltonian to reproduce the self-consistent band structures of higher stage GICs are first introduced. Then the effect of the inhomogeneous charge distribution along the c-axis are clarified. It is shown that the interband effect between π-bands split by the inhomogeneous charge distribution plays an essential role in producing the paramagnetic orbital susceptibility in lower stages and in determining the stage dependence. Theoretical results of the stage dependence of orbital susceptibility with f=1.0 are in good agreement with observed ones.",

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AU - Saito, R.

AU - Kamimura, H.

PY - 1985/1/1

Y1 - 1985/1/1

N2 - The calculated results of orbital susceptibility for 1st to 5th stage GICs with charge transfer f=1.0 are presented. In this calculation the effective Hamiltonian to reproduce the self-consistent band structures of higher stage GICs are first introduced. Then the effect of the inhomogeneous charge distribution along the c-axis are clarified. It is shown that the interband effect between π-bands split by the inhomogeneous charge distribution plays an essential role in producing the paramagnetic orbital susceptibility in lower stages and in determining the stage dependence. Theoretical results of the stage dependence of orbital susceptibility with f=1.0 are in good agreement with observed ones.

AB - The calculated results of orbital susceptibility for 1st to 5th stage GICs with charge transfer f=1.0 are presented. In this calculation the effective Hamiltonian to reproduce the self-consistent band structures of higher stage GICs are first introduced. Then the effect of the inhomogeneous charge distribution along the c-axis are clarified. It is shown that the interband effect between π-bands split by the inhomogeneous charge distribution plays an essential role in producing the paramagnetic orbital susceptibility in lower stages and in determining the stage dependence. Theoretical results of the stage dependence of orbital susceptibility with f=1.0 are in good agreement with observed ones.

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EP - 300

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1-2

ER -

Orbital susceptibility of higher stage GICs

Abstract

ASJC Scopus subject areas

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