Orbital susceptibility of higher stage GICs

R. Saito, H. Kamimura

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

The calculated results of orbital susceptibility for 1st to 5th stage GICs with charge transfer f=1.0 are presented. In this calculation the effective Hamiltonian to reproduce the self-consistent band structures of higher stage GICs are first introduced. Then the effect of the inhomogeneous charge distribution along the c-axis are clarified. It is shown that the interband effect between π-bands split by the inhomogeneous charge distribution plays an essential role in producing the paramagnetic orbital susceptibility in lower stages and in determining the stage dependence. Theoretical results of the stage dependence of orbital susceptibility with f=1.0 are in good agreement with observed ones.

Original languageEnglish
Pages (from-to)295-300
Number of pages6
JournalSynthetic Metals
Volume12
Issue number1-2
DOIs
Publication statusPublished - 1985 Jan 1
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys
  • Materials Chemistry

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