Abstract
The calculated results of orbital susceptibility for 1st to 5th stage GICs with charge transfer f=1.0 are presented. In this calculation the effective Hamiltonian to reproduce the self-consistent band structures of higher stage GICs are first introduced. Then the effect of the inhomogeneous charge distribution along the c-axis are clarified. It is shown that the interband effect between π-bands split by the inhomogeneous charge distribution plays an essential role in producing the paramagnetic orbital susceptibility in lower stages and in determining the stage dependence. Theoretical results of the stage dependence of orbital susceptibility with f=1.0 are in good agreement with observed ones.
Original language | English |
---|---|
Pages (from-to) | 295-300 |
Number of pages | 6 |
Journal | Synthetic Metals |
Volume | 12 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 1985 Jan 1 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry