Orbital-selective confinement effect of Ru 4d orbitals in SrRuO3 ultrathin film

Soonmin Kang, Yi Tseng, Beom Hyun Kim, Seokhwan Yun, Byungmin Sohn, Bongju Kim, Daniel McNally, Eugenio Paris, Choong H. Kim, Changyoung Kim, Tae Won Noh, Sumio Ishihara, Thorsten Schmitt, Je Geun Park

Research output: Contribution to journalArticlepeer-review

Abstract

The electronic structure of SrRuO3 thin film with thickness from 50 to 1 unit cell (u.c.) is investigated via the resonant inelastic x-ray scattering (RIXS) technique at the O K-edge to unravel the intriguing interplay of orbital and charge degrees of freedom. We found that orbital-selective quantum confinement effect (QCE) induces the splitting of Ru 4d orbitals. At the same time, we observed a clear suppression of the electron-hole continuum across the metal-to-insulator transition (MIT) occurring at the 4 u.c. sample. From these two clear observations we conclude that QCE gives rise to a Mott insulating phase in ultrathin SrRuO3 films. Our interpretation of the RIXS spectra is supported by the configuration interaction calculations of RuO6 clusters.

Original languageEnglish
JournalUnknown Journal
Publication statusPublished - 2018 Dec 24

ASJC Scopus subject areas

  • General

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