Orbital-selective confinement effect of Ru 4d orbitals in SrRuO3 ultrathin film

Soonmin Kang; Yi Tseng; Beom Hyun Kim; Seokhwan Yun; Byungmin Sohn; Bongju Kim; Daniel McNally; Eugenio Paris; Choong H. Kim; Changyoung Kim; Tae Won Noh; Sumio Ishihara; Thorsten Schmitt; Je Geun Park

Orbital-selective confinement effect of Ru 4d orbitals in SrRuO₃ ultrathin film

Soonmin Kang, Yi Tseng, Beom Hyun Kim, Seokhwan Yun, Byungmin Sohn, Bongju Kim, Daniel McNally, Eugenio Paris, Choong H. Kim, Changyoung Kim, Tae Won Noh, Sumio Ishihara, Thorsten Schmitt, Je Geun Park

SCI - Physics

Research output: Contribution to journal › Article › peer-review

Abstract

The electronic structure of SrRuO3 thin film with thickness from 50 to 1 unit cell (u.c.) is investigated via the resonant inelastic x-ray scattering (RIXS) technique at the O K-edge to unravel the intriguing interplay of orbital and charge degrees of freedom. We found that orbital-selective quantum confinement effect (QCE) induces the splitting of Ru 4d orbitals. At the same time, we observed a clear suppression of the electron-hole continuum across the metal-to-insulator transition (MIT) occurring at the 4 u.c. sample. From these two clear observations we conclude that QCE gives rise to a Mott insulating phase in ultrathin SrRuO3 films. Our interpretation of the RIXS spectra is supported by the configuration interaction calculations of RuO6 clusters.

Original language	English
Journal	Unknown Journal
Publication status	Published - 2018 Dec 24

ASJC Scopus subject areas

General

Fingerprint Dive into the research topics of 'Orbital-selective confinement effect of Ru 4d orbitals in SrRuO<sub>3</sub> ultrathin film'. Together they form a unique fingerprint.

Cite this

Orbital-selective confinement effect of Ru 4d orbitals in SrRuO₃ ultrathin film. / Kang, Soonmin; Tseng, Yi; Kim, Beom Hyun; Yun, Seokhwan; Sohn, Byungmin; Kim, Bongju; McNally, Daniel; Paris, Eugenio; Kim, Choong H.; Kim, Changyoung; Noh, Tae Won; Ishihara, Sumio; Schmitt, Thorsten; Park, Je Geun.

In: Unknown Journal, 24.12.2018.

Research output: Contribution to journal › Article › peer-review

@article{efa7cc018e714684b1c44fbd453f874b,

title = "Orbital-selective confinement effect of Ru 4d orbitals in SrRuO3 ultrathin film",

abstract = "The electronic structure of SrRuO3 thin film with thickness from 50 to 1 unit cell (u.c.) is investigated via the resonant inelastic x-ray scattering (RIXS) technique at the O K-edge to unravel the intriguing interplay of orbital and charge degrees of freedom. We found that orbital-selective quantum confinement effect (QCE) induces the splitting of Ru 4d orbitals. At the same time, we observed a clear suppression of the electron-hole continuum across the metal-to-insulator transition (MIT) occurring at the 4 u.c. sample. From these two clear observations we conclude that QCE gives rise to a Mott insulating phase in ultrathin SrRuO3 films. Our interpretation of the RIXS spectra is supported by the configuration interaction calculations of RuO6 clusters.",

author = "Soonmin Kang and Yi Tseng and Kim, {Beom Hyun} and Seokhwan Yun and Byungmin Sohn and Bongju Kim and Daniel McNally and Eugenio Paris and Kim, {Choong H.} and Changyoung Kim and Noh, {Tae Won} and Sumio Ishihara and Thorsten Schmitt and Park, {Je Geun}",

year = "2018",

month = dec,

day = "24",

language = "English",

journal = "[No source information available]",

}

TY - JOUR

T1 - Orbital-selective confinement effect of Ru 4d orbitals in SrRuO3 ultrathin film

AU - Kang, Soonmin

AU - Tseng, Yi

AU - Kim, Beom Hyun

AU - Yun, Seokhwan

AU - Sohn, Byungmin

AU - Kim, Bongju

AU - McNally, Daniel

AU - Paris, Eugenio

AU - Kim, Choong H.

AU - Kim, Changyoung

AU - Noh, Tae Won

AU - Ishihara, Sumio

AU - Schmitt, Thorsten

AU - Park, Je Geun

PY - 2018/12/24

Y1 - 2018/12/24

N2 - The electronic structure of SrRuO3 thin film with thickness from 50 to 1 unit cell (u.c.) is investigated via the resonant inelastic x-ray scattering (RIXS) technique at the O K-edge to unravel the intriguing interplay of orbital and charge degrees of freedom. We found that orbital-selective quantum confinement effect (QCE) induces the splitting of Ru 4d orbitals. At the same time, we observed a clear suppression of the electron-hole continuum across the metal-to-insulator transition (MIT) occurring at the 4 u.c. sample. From these two clear observations we conclude that QCE gives rise to a Mott insulating phase in ultrathin SrRuO3 films. Our interpretation of the RIXS spectra is supported by the configuration interaction calculations of RuO6 clusters.

AB - The electronic structure of SrRuO3 thin film with thickness from 50 to 1 unit cell (u.c.) is investigated via the resonant inelastic x-ray scattering (RIXS) technique at the O K-edge to unravel the intriguing interplay of orbital and charge degrees of freedom. We found that orbital-selective quantum confinement effect (QCE) induces the splitting of Ru 4d orbitals. At the same time, we observed a clear suppression of the electron-hole continuum across the metal-to-insulator transition (MIT) occurring at the 4 u.c. sample. From these two clear observations we conclude that QCE gives rise to a Mott insulating phase in ultrathin SrRuO3 films. Our interpretation of the RIXS spectra is supported by the configuration interaction calculations of RuO6 clusters.

UR - http://www.scopus.com/inward/record.url?scp=85095185566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85095185566&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:85095185566

JO - [No source information available]

JF - [No source information available]

ER -