Orbital-selective confinement effect of Ru 4d orbitals in SrRuO3 ultrathin film

Soonmin Kang, Yi Tseng, Beom Hyun Kim, Seokhwan Yun, Byungmin Sohn, Bongju Kim, Daniel McNally, Eugenio Paris, Choong H. Kim, Changyoung Kim, Tae Won Noh, Sumio Ishihara, Thorsten Schmitt, Je Geun Park

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13 Citations (Scopus)


The electronic structure of SrRuO3 thin film with a thickness from 1 to 50 unit cell (u.c.) is investigated via the resonant inelastic x-ray scattering (RIXS) technique at the O K edge to unravel the intriguing interplay of orbital and charge degrees of freedom. We found that the orbital-selective quantum confinement effect (QCE) induces the splitting of Ru 4d orbitals. At the same time, we observed a clear suppression of the electron-hole continuum across the metal-to-insulator transition occurring in the 4-u.c. sample. From these two clear observations we conclude that the QCE gives rise to a Mott insulating phase in ultrathin SrRuO3 films. Our interpretation of the RIXS spectra is supported by the configuration interaction calculations of RuO6 clusters.

Original languageEnglish
Article number045113
JournalPhysical Review B
Issue number4
Publication statusPublished - 2019 Jan 7

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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