Optimized growth conditions of epitaxial SnSe films grown by pulsed laser deposition

Takamitsu Hara, Hiroyuki Fujishiro, Tomoyuki Naito, Akihiko Ito, Takashi Goto

Research output: Contribution to journalArticle

Abstract

We have grown epitaxial tin monoselenide (SnSe) films on MgO or SrTiO3 (STO) substrates by pulsed laser deposition (PLD) at T s = 473 or 573 K, and investigated the optimized growth condition in terms of crystal orientation, crystallinity, and electrical resistivity. For the PLD procedure, a SnSe x (x = 1.0-1.6) target containing excess Se was used to compensate for the vaporization of Se. The crystal orientation and crystallinity of the SnSe films changed depending on the growth conditions, and the magnitude of the electrical resistivity ρ of the films was closely related to the crystalline nature. The SnSe film grown on the MgO substrate at T s = 573 K using the target with x = 1.4 was the most highly a-axis-oriented and highly crystalized among all of the films investigated in this study. However, the ρ of the film in the bc-plane was about one order of magnitude larger than those of the reported single crystal and the a-axis-oriented crystalline sample fabricated by spark plasma sintering. This larger ρ was suggested to result from the lattice mismatch and/or a small amount of nonstoichiometry in the film.

Original languageEnglish
Article number125503
JournalJapanese journal of applied physics
Volume56
Issue number12
DOIs
Publication statusPublished - 2017 Dec

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Optimized growth conditions of epitaxial SnSe films grown by pulsed laser deposition'. Together they form a unique fingerprint.

  • Cite this