Optimization of ZnSe growth on miscut GaAs substrates by molecular beam epitaxy

J. S. Song, J. H. Chang, D. C. Oh, J. J. Kim, M. W. Cho, H. Makino, T. Hanada, T. Yao

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24 Citations (Scopus)


We report growth optimization of molecular beam epitaxy (MBE) grown ZnSe on GaAs (0 0 1) substrate tilted by 15 ° toward [1 1 0] in terms of beam equivalent pressure (BEP) ratio and growth temperature. A LT-ZnSe buffer was grown to reduce the formation of Ga-Se bonding, a well-known source of defect generation, due to interdiffusion through the heterointerface in the initial stage of growth. The ZnSe layer was further optimized by low-temperature-grown (LT-ZnSe) buffer. The optical and structural properties of the ZnSe film with LT-ZnSe and GaAs buffer are also analyzed by photoluminescence spectroscopy (PL), X-ray diffraction (XRD), and secondary ion mass spectroscopy (SIMS), which show very large intensity ratio of near-band-edge emission to deep level emission, narrow XRD peak width of (0 0 4) rocking curves, and abrupt ZnSe/GaAs heterointerface under the optimum growth condition, respectively. The optimum growth conditions are BEP ratio (PSe/PZn) of 3 and growth temperature of 310 °C with an LT-ZnSe buffer grown at 250 °C.

Original languageEnglish
Pages (from-to)128-143
Number of pages16
JournalJournal of Crystal Growth
Issue number1-2
Publication statusPublished - 2003 Feb


  • A3. Molecular beam epitaxy
  • B2. Semiconducting II-VI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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