A new concept, promoting emitter diffusion (PED) process by using high-temperature annealing, is proposed for fabricating high-performance SiGe HBTs. Both the cut-off frequency and maximum oscillation frequency exceeded 200GHz when the annealing temperature was increased from 885°C to 1000°C. This PED process concept is based on the fact that the increased phosphorus diffusion can more than compensate increased boron diffusion and decrease base thickness.
|Number of pages||4|
|Journal||Proceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting|
|Publication status||Published - 2004 Dec 1|
|Event||Proceedings of the 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Montreal, Que., Canada|
Duration: 2004 Sep 13 → 2004 Sep 14
ASJC Scopus subject areas
- Electrical and Electronic Engineering