Optimization of vertical profiles of SiGe HBT/BiCMOS by promoting emitter diffusion process

Makoto Miura, Hiromi Shimamoto, Reiko Hayami, Akihiro Kodama, Tatsuya Tominari, Takashi Hashimoto, Katsuyoshi Washio

Research output: Contribution to journalConference article

Abstract

A new concept, promoting emitter diffusion (PED) process by using high-temperature annealing, is proposed for fabricating high-performance SiGe HBTs. Both the cut-off frequency and maximum oscillation frequency exceeded 200GHz when the annealing temperature was increased from 885°C to 1000°C. This PED process concept is based on the fact that the increased phosphorus diffusion can more than compensate increased boron diffusion and decrease base thickness.

Original languageEnglish
Article number4.4
Pages (from-to)92-95
Number of pages4
JournalProceedings of the IEEE Bipolar/BiCMOS Circuits and Technology Meeting
Publication statusPublished - 2004 Dec 1
Externally publishedYes
EventProceedings of the 2004 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - Montreal, Que., Canada
Duration: 2004 Sep 132004 Sep 14

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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