Optimization of the piezoresistive AFM cantilever design for use at cryogenic temperatures

Seung Seoup Lee, Yutaka Miyatake, Ichiro Shiraki, Toshihiko Nagamura, Kazushi Miki, Takahito Ono, Masayoshi Esashi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

We have developed heavily boron-doped piezoresistive single-crystalline silicon AFM cantilevers which aimed for operating at low temperatures including cryogenic temperature range. The optimization of design to increase the sensitivity and reduce noise at cryogenic temperature is considered by controlling the dopant concentration. The relatively low concentration of 6×10 18 atoms/cm 3 shows the lowest Minimum Detectable Force (MDF) at room temperature (R.T.) by calculation. However, it was predicted that the optimal concentration of dopant was shifted to a higher concentration at cryogenic temperature in MDF by calculation. Firstly we developed AFM cantilevers integrated with piezoresistive elements at the support of the cantilever. Actually the fabricated heavily doped cantilever shows that the sensitivity at cryogenic temperature increased by 1.6 times at 5 K than that at R.T.

Original languageEnglish
Title of host publicationTRANSDUCERS '05 - 13th International Conference on Solid-State Sensors and Actuators and Microsystems - Digest of Technical Papers
Pages625-629
Number of pages5
DOIs
Publication statusPublished - 2005 Nov 9
Event13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05 - Seoul, Korea, Republic of
Duration: 2005 Jun 52005 Jun 9

Publication series

NameDigest of Technical Papers - International Conference on Solid State Sensors and Actuators and Microsystems, TRANSDUCERS '05
Volume1

Other

Other13th International Conference on Solid-State Sensors and Actuators and Microsystems, TRANSDUCERS '05
CountryKorea, Republic of
CitySeoul
Period05/6/505/6/9

Keywords

  • 1/f noise
  • Hooge noise
  • Johnson noise

ASJC Scopus subject areas

  • Engineering(all)

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