Abstract
Cu-Mn alloy was deposited as a source-drain electrode on plasma-oxidized amorphous Si substrates. The oxidation conditions were optimized successfully to obtain a good diffusion barrier property, adhesion strength, and Ohmic contact.
| Original language | English |
|---|---|
| Pages | 275-277 |
| Number of pages | 3 |
| Publication status | Published - 2009 Dec 1 |
| Event | 16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 2009 Dec 9 → 2009 Dec 11 |
Other
| Other | 16th International Display Workshops, IDW '09 |
|---|---|
| Country | Japan |
| City | Miyazaki |
| Period | 09/12/9 → 09/12/11 |
ASJC Scopus subject areas
- Hardware and Architecture
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
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Koike, J., Sano, M., Hirota, K., Suto, Y., & Neishi, K. (2009). Optimization of source-drain contact process with Cu-Mn alloys. 275-277. Paper presented at 16th International Display Workshops, IDW '09, Miyazaki, Japan.