Abstract
Cu-Mn alloy was deposited as a source-drain electrode on plasma-oxidized amorphous Si substrates. The oxidation conditions were optimized successfully to obtain a good diffusion barrier property, adhesion strength, and Ohmic contact.
| Original language | English |
|---|---|
| Pages | 275-277 |
| Number of pages | 3 |
| Publication status | Published - 2009 Dec 1 |
| Event | 16th International Display Workshops, IDW '09 - Miyazaki, Japan Duration: 2009 Dec 9 → 2009 Dec 11 |
Other
| Other | 16th International Display Workshops, IDW '09 |
|---|---|
| Country/Territory | Japan |
| City | Miyazaki |
| Period | 09/12/9 → 09/12/11 |
ASJC Scopus subject areas
- Hardware and Architecture
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials