Optimization of second-order nonlinearity in UV-poled silica glass

J. Khaled, T. Fujiwara, A. J. Ikushima

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

Second-order optical nonlinearity was induced by ultraviolet (UV)-poling in Ge-doped SiO2 thin films prepared by radio-frequency sputtering. Effects of sputtering, poling conditions and other treatment on the intensity and decay of second harmonic generation (SHG) were investigated. The d coefficient which is a measure of SHG intensity was found to depend on oxygen flow content during sputtering and on Ge-content with an optimum at around 1 cm3/min and 50 mol%, respectively. The UV-poling conditions largely enhance d coefficient which saturates at poling fields equal or larger than Ep = 1 × 105 V/cm and at total excitation energy of 1 kJ. Preannealing in vacuum enhanced d coefficient with the maximum of 12.5 ± 0.6 pm/V was achieved by annealing at 500°C for 24 h. The addition of hydrogen prior to UV-poling largely improved the decay of d coefficient from several months to around 7 years.

Original languageEnglish
Pages (from-to)275-278
Number of pages4
JournalOptical Materials
Volume17
Issue number1-2
DOIs
Publication statusPublished - 2001 Jun
Externally publishedYes

Keywords

  • Defects
  • Ge-doped silica glass
  • Second-order nonlinearity
  • Thin film
  • UV-poling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Computer Science(all)
  • Atomic and Molecular Physics, and Optics
  • Spectroscopy
  • Physical and Theoretical Chemistry
  • Organic Chemistry
  • Inorganic Chemistry
  • Electrical and Electronic Engineering

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