Optimization of low temperature surface treatment of GaAs crystal

Jun Ichi Nishizawa, Yutaka Oyama, Piotr Plotka, Hiroshi Sakuraba

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)

Abstract

This paper reports the effects of a low temperature surface treatment under AsH3 overpressure on the GaAs regrown interface quality prepared by photostimulated molecular layer epitaxy. The regrown diode I-V characteristics are investigated as functions of treatment temperature, AsH3 pressure and treatment time. Optimized surface treatment conditions enable a good regrown interface to be obtained even at a lower temperature of ∼480°C than the conventional high temperature treatment at ∼600°C. The surface treatment mechanism is also discussed in combination with the results of X-ray photoemission spectroscopy and quadrupole mass analysis.

Original languageEnglish
Pages (from-to)105-114
Number of pages10
JournalSurface Science
Volume348
Issue number1-2
DOIs
Publication statusPublished - 1996 Mar 1
Externally publishedYes

Keywords

  • Electrical transport measurements
  • Gallium arsenide
  • Semiconductor-semiconductor interfaces
  • Semiconductor-semiconductor thin film structures
  • Single crystal epitaxy
  • Surface chemical reaction
  • X-ray photoelectron spectroscopy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

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