Optimization of HfSiON using a design of experiment (DOE) approach on 0.45 V Vt Ni-FUSI CMOS transistors

A. Rothschild, R. Mitsuhashi, C. Kerner, X. Shi, J. L. Everaert, L. Date, T. Conard, O. Richard, C. Vrancken, R. Verbeeck, A. Veloso, A. Lauwers, M. De Potter, I. Debusschere, M. Jurczak, M. Niwa, P. Absil, S. Biesemans

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