Optimization of half-Heusler PtMnSb alloy films for spintronic device applications

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Abstract

Half-Heusler PtMnSb alloy films were optimized with varying deposition temperatures on Cr/Ag-buffered MgO(0 0 1) substrates by investigating structural and magnetic properties. Epitaxial growth was achieved in PtMnSb films grown at 200 °C while high magnetization of 530 emu cm-3 was observed at 500 °C. Compared to other Heusler alloys, the PtMnSb films show relatively large anisotropic magnetoresistance ratios with negative sign, which could be attributed to high spin-orbit interaction in the PtMnSb films owing to Pt. Furthermore, current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices as a kind of representative spintronic devices were fabricated with the structure of PtMnSb/Ag/PtMnSb. Roomerature CPP-GMR effect was first observed in the PtMnSb-based CPP-GMR devices.

Original languageEnglish
Article number435002
JournalJournal of Physics D: Applied Physics
Volume51
Issue number43
DOIs
Publication statusPublished - 2018 Sep 24

Keywords

  • CPP-GMR
  • Eusler alloys
  • spintronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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