Abstract
Characteristics related to the emitter-base junction of self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors (HBTs) were optimized for use with a highly-doped base. The thickness of the Si-cap layer affected both the emitter-base junction concentration and space-charge width, so the dc and ac characteristics of the SiGe HBTs were in turn dependent on this thickness. With a 4 × 10 19-cm -3 boron-doped base, a 131-GHz cutoff frequency and ECL gate-delay time of 5.4H ps were achieved for the optimized SiGe HBTs. A static frequency divider with a maximum operating frequency of 72.2 GHz and a dynamic frequency divider with a maximum operating frequency of 92.4 GHz were developed for the optical-fiber link and millimeter-wave communication systems of the future.
Original language | English |
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Pages (from-to) | 1755-1760 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 49 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2002 Oct |
Externally published | Yes |
Keywords
- Bipolar transistors
- Emitter coupled logic
- Epitaxial growth
- Frequency conversion
- Heterojunctions
- Millimeter wave bipolar integrated circuits
- Millimeter wave monolithic integrated circuits (MIMICs)
- Optical communication
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering