Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividers

Katsuyoshi Washio; Eiji Ohue; Katsuya Oda; Reiko Hayami; Masamichi Tanabe; Hiromi Shimamoto

doi:10.1109/TED.2002.803661

Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividers

Katsuyoshi Washio, Eiji Ohue, Katsuya Oda, Reiko Hayami, Masamichi Tanabe, Hiromi Shimamoto

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Characteristics related to the emitter-base junction of self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors (HBTs) were optimized for use with a highly-doped base. The thickness of the Si-cap layer affected both the emitter-base junction concentration and space-charge width, so the dc and ac characteristics of the SiGe HBTs were in turn dependent on this thickness. With a 4 × 10 ¹⁹-cm ^-3 boron-doped base, a 131-GHz cutoff frequency and ECL gate-delay time of 5.4H ps were achieved for the optimized SiGe HBTs. A static frequency divider with a maximum operating frequency of 72.2 GHz and a dynamic frequency divider with a maximum operating frequency of 92.4 GHz were developed for the optical-fiber link and millimeter-wave communication systems of the future.

Original language	English
Pages (from-to)	1755-1760
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	49
Issue number	10
DOIs	https://doi.org/10.1109/TED.2002.803661
Publication status	Published - 2002 Oct
Externally published	Yes

Keywords

Bipolar transistors
Emitter coupled logic
Epitaxial growth
Frequency conversion
Heterojunctions
Millimeter wave bipolar integrated circuits
Millimeter wave monolithic integrated circuits (MIMICs)
Optical communication

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividers. / Washio, Katsuyoshi; Ohue, Eiji; Oda, Katsuya; Hayami, Reiko; Tanabe, Masamichi; Shimamoto, Hiromi.

In: IEEE Transactions on Electron Devices, Vol. 49, No. 10, 10.2002, p. 1755-1760.

Research output: Contribution to journal › Article › peer-review

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title = "Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividers",

abstract = "Characteristics related to the emitter-base junction of self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors (HBTs) were optimized for use with a highly-doped base. The thickness of the Si-cap layer affected both the emitter-base junction concentration and space-charge width, so the dc and ac characteristics of the SiGe HBTs were in turn dependent on this thickness. With a 4 × 10 19-cm -3 boron-doped base, a 131-GHz cutoff frequency and ECL gate-delay time of 5.4H ps were achieved for the optimized SiGe HBTs. A static frequency divider with a maximum operating frequency of 72.2 GHz and a dynamic frequency divider with a maximum operating frequency of 92.4 GHz were developed for the optical-fiber link and millimeter-wave communication systems of the future.",

keywords = "Bipolar transistors, Emitter coupled logic, Epitaxial growth, Frequency conversion, Heterojunctions, Millimeter wave bipolar integrated circuits, Millimeter wave monolithic integrated circuits (MIMICs), Optical communication",

author = "Katsuyoshi Washio and Eiji Ohue and Katsuya Oda and Reiko Hayami and Masamichi Tanabe and Hiromi Shimamoto",

year = "2002",

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AU - Washio, Katsuyoshi

AU - Ohue, Eiji

AU - Oda, Katsuya

AU - Hayami, Reiko

AU - Tanabe, Masamichi

AU - Shimamoto, Hiromi

PY - 2002/10

Y1 - 2002/10

N2 - Characteristics related to the emitter-base junction of self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors (HBTs) were optimized for use with a highly-doped base. The thickness of the Si-cap layer affected both the emitter-base junction concentration and space-charge width, so the dc and ac characteristics of the SiGe HBTs were in turn dependent on this thickness. With a 4 × 10 19-cm -3 boron-doped base, a 131-GHz cutoff frequency and ECL gate-delay time of 5.4H ps were achieved for the optimized SiGe HBTs. A static frequency divider with a maximum operating frequency of 72.2 GHz and a dynamic frequency divider with a maximum operating frequency of 92.4 GHz were developed for the optical-fiber link and millimeter-wave communication systems of the future.

AB - Characteristics related to the emitter-base junction of self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors (HBTs) were optimized for use with a highly-doped base. The thickness of the Si-cap layer affected both the emitter-base junction concentration and space-charge width, so the dc and ac characteristics of the SiGe HBTs were in turn dependent on this thickness. With a 4 × 10 19-cm -3 boron-doped base, a 131-GHz cutoff frequency and ECL gate-delay time of 5.4H ps were achieved for the optimized SiGe HBTs. A static frequency divider with a maximum operating frequency of 72.2 GHz and a dynamic frequency divider with a maximum operating frequency of 92.4 GHz were developed for the optical-fiber link and millimeter-wave communication systems of the future.

KW - Bipolar transistors

KW - Emitter coupled logic

KW - Epitaxial growth

KW - Frequency conversion

KW - Heterojunctions

KW - Millimeter wave bipolar integrated circuits

KW - Millimeter wave monolithic integrated circuits (MIMICs)

KW - Optical communication

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JO - IEEE Transactions on Electron Devices

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Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividers

Abstract

Keywords

ASJC Scopus subject areas

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