Optimization of characteristics related to the emitter-base junction in self-aligned SEG SiGe HBTs and their application in 72-GHz-static/92-GHz-dynamic frequency dividers

Katsuyoshi Washio, Eiji Ohue, Katsuya Oda, Reiko Hayami, Masamichi Tanabe, Hiromi Shimamoto

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Characteristics related to the emitter-base junction of self-aligned selective-epitaxial-growth SiGe heterojunction bipolar transistors (HBTs) were optimized for use with a highly-doped base. The thickness of the Si-cap layer affected both the emitter-base junction concentration and space-charge width, so the dc and ac characteristics of the SiGe HBTs were in turn dependent on this thickness. With a 4 × 10 19-cm -3 boron-doped base, a 131-GHz cutoff frequency and ECL gate-delay time of 5.4H ps were achieved for the optimized SiGe HBTs. A static frequency divider with a maximum operating frequency of 72.2 GHz and a dynamic frequency divider with a maximum operating frequency of 92.4 GHz were developed for the optical-fiber link and millimeter-wave communication systems of the future.

Original languageEnglish
Pages (from-to)1755-1760
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume49
Issue number10
DOIs
Publication statusPublished - 2002 Oct 1
Externally publishedYes

Keywords

  • Bipolar transistors
  • Emitter coupled logic
  • Epitaxial growth
  • Frequency conversion
  • Heterojunctions
  • Millimeter wave bipolar integrated circuits
  • Millimeter wave monolithic integrated circuits (MIMICs)
  • Optical communication

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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