Optimal device structure for pipe-shaped BiCS flash memory for ultra high density storage device with excellent performance and reliability

Megumi Ishiduki, Yoshiaki Fukuzumi, Ryota Katsumata, Masaru Kito, Masaru Kido, Hiroyasu Tanaka, Yosuke Komori, Yuzo Nagata, Tomoko Fujiwara, Takashi Maeda, Yoshimasa Mikajiri, Shigeto Oota, Makoto Honda, Yoshihisa Iwata, Ryouhei Kirisawa, Hideaki Aochi, Akihiro Nitayama

Research output: Chapter in Book/Report/Conference proceedingConference contribution

32 Citations (Scopus)

Abstract

An asymmetric source/drain profile for select gate and metal salicided control gate are successfully realized on Pipe-shaped Bit Cost Scalable (P-BiCS) Flash memory to achieve data storage device with excellent performance and reliability.

Original languageEnglish
Title of host publication2009 International Electron Devices Meeting, IEDM 2009 - Technical Digest
Pages27.3.1-27.3.4
DOIs
Publication statusPublished - 2009 Dec 1
Event2009 International Electron Devices Meeting, IEDM 2009 - Baltimore, MD, United States
Duration: 2009 Dec 72009 Dec 9

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2009 International Electron Devices Meeting, IEDM 2009
CountryUnited States
CityBaltimore, MD
Period09/12/709/12/9

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Optimal device structure for pipe-shaped BiCS flash memory for ultra high density storage device with excellent performance and reliability'. Together they form a unique fingerprint.

Cite this